California Institute of Technology

Stefan Omelchenko

Nathan S Lewis

Sisir Yalamanchili

Increasing the power conversion efficiency of silicon (Si) photovoltaics is a key enabler for continued reductions in the cost of solar electricity. Disclosed herein is a multi-junction photovoltaic cell that does not utilize a conventional interconnection layer and instead places a wide bandgap oxide conductor, for example, a metal oxide such as TiO, between a top light absorption layer having a relatively large bandgap and a bottom light absorption layer having a relatively small bandgap. The advantageous omission of a conventional interconnection layer between the two subcells is enabled by low contact resistivity between the top and bottom light absorbing layers provided by the wide bandgap oxide conductor. The absence of the conventional interconnect between the subcells significantly reduces both optical losses and processing steps. The disclosed photovoltaic cell may thus enable low-cost, high-efficiency multi-junction devices through less complex manufacturing processes and lower material costs.

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Los Angeles, CA, United States of America

Stefan Omelchenko