Ixys Corporation

Stefan Moessner

Markus Weyers

A power semiconductor device includes a substrate of first conductivity having a dopant concentration of a first level. The substrate is a group III-V compound material. A transitional layer of first conductivity is epitaxially grown over the substrate. The transitional layer has a dopant concentration of a second level and is a group III-V compound material. An epitaxial layer of first conductivity is grown over the transitional layer and has a dopant concentration of a third level. Electrical currents flow through the transitional and epitaxial layers when the device is operating.

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Berlin, Germany

Stefan Moessner