Infineon Technologies Ag

Tagstar Systems Gmbh

Leonhard Kurz Stiftung & Co Kg

Identive Group, Inc.

Identive Systems Gmbh

Identiv Gmbh

Stefan Mieslinger

Markus Zundel

Franz Jost

Thomas Krotscheck Ostermann

Markus Dinkel

Liu Chen

Toni Salminen

Jens Oetjen

Giuliano Angelo Babulano

Thorsten Meyer

Martin Gruber

Rainer Markus Schaller

Andrew Christopher Graeme Wood

Michael Kober

Jens Peter Konrath

Rainald Sander

Stephan Leisenheimer

Jochen Hilsenbeck

Ulrich Schindler

Christian Schumacher

Markus Bader

Anatoly Sotnikov

Christian Westermeier

Boris Mayerhofer

Norbert Wilhelm Menke

According to an embodiment of a semiconductor device, the semiconductor device includes: a first active cell area comprising a first plurality of parallel gate trenches; a second active cell area comprising a second plurality of parallel gate trenches; and a metallization layer above the first and the second active cell areas. The metallization layer includes: a first part contacting a semiconductor mesa region between the plurality of parallel gate trenches in the first and the second active cell areas; and a second part surrounding the first part. The second part of the metallization layer contacts the first plurality of gate trenches along a first direction and the second plurality of gate trenches along a second direction different from the first direction.

Gate contact structure for semiconductor device

Semiconductor device with multi-branch gate contact structure

This disclosure is directed to techniques that may accurately determine the amount of current flowing through a power switch circuit by measuring the voltage across the inherent impedance of the circuit connections. One connection may include a low impedance connection between the power switch output and ground, where the low impedance connection may be on the order of milliohms. By using a four-wire measurement, the sensing connections are not in the current path, so the measured value may not be affected by the current. The connection that makes up the current path can be accomplished with a variety of conductive materials. Conductive materials may have a temperature coefficient of resistivity that may impact a measurement of electric current as the temperature changes. Measuring the temperature of the current path, along with the voltage across the connection, may allow a more accurate current measurement.

Configuration of integrated current flow sensor

A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

Preliminary trenches formed in kerf regions for die singulation

In some examples, a half-bridge circuit includes a first switch including a first load terminal, a second load terminal, a first control terminal, and a second control terminal that is electrically isolated from the first control terminal of the first switch. The half-bridge circuit further includes a second switch including a first load terminal electrically connected to the second load terminal of the first switch, a second load terminal, and a control terminal.

Multi-gate half-bridge circuit and package

An interconnect module includes a metal clip having a first end section, a second end section and a middle section extending between the first and the second end sections. The first end section is configured for external attachment to a bare semiconductor die or packaged semiconductor die attached to a carrier or to a metal region of the carrier. The second end section is configured for external attachment to a different metal region of the carrier or to a different semiconductor die or packaged semiconductor die attached to the carrier. The module further includes a magnetic field sensor secured to the metal clip. The magnetic field sensor is operable to sense a magnetic field produced by current flowing through the metal clip. The interconnect module can be used to form a direct electrical connection between components and/or metal regions of a carrier to which the module is attached.

Multi-functional interconnect module and carrier with multi-functional interconnect module attached thereto

The invention relates to a multilayered film element () comprising a first component, more particularly an RFID antenna in the form of a multilayered film element, and to a method for fixing a second component on a film element () of this type. The film element () has a dielectric layer () having a front side (V) and a rear side (R). The film element () has a layer () forming a first component, and at least one component contact area () arranged on the front side (V) and connected to the first component. The film element () has at least one thermode contact layer () which is arranged on the dielectric layer () and which, as seen perpendicularly to the dielectric layer (), is arranged in the region of the at least one component contact area (). The thermode contact layer () has a thermode contact area () on a side facing away from the dielectric layer (), said thermode contact area forming an outer surface of the film element ().

Multilayered film element

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

Power package with integrated magnetic field sensor

A semiconductor package includes a semiconductor die attached to a substrate and a magnetic field sensor included as part of the same semiconductor package as the semiconductor die and positioned in close proximity to a current pathway of the semiconductor die so that the magnetic field sensor can sense a magnetic field produced by current flowing in the current pathway. The magnetic field sensor includes a first magnetic field sensing component galvanically isolated from the current pathway and positioned so that a magnetic field produced by current flowing in the current pathway impinges on the first magnetic field sensing component in a first direction. The magnetic field sensor also includes a second magnetic field sensing component galvanically isolated from the current pathway and positioned so that the magnetic field impinges on the second magnetic field sensing component in a second direction different than the first direction.

Semiconductor package with integrated magnetic field sensor

Described are RFID structures and methods for forming RFID structures. An RFID structure includes an antenna substrate and a loop antenna assembly positioned on the antenna substrate. The loop antenna assembly includes at least two contact pads and a plurality of antenna loop windings having an average spacing between adjacent antenna loop windings of the plurality of loop windings. The plurality of antenna loop windings define one or more gap regions that separate adjacent or adjoining antenna segments of the plurality of antenna loop windings by at least twice the average spacing.

Tamper-proof RFID label

Described are antenna assemblies and methods for forming antenna assemblies. An antenna assembly includes a dual polarized far-field antenna and a near-field loop antenna. The near-field loop antenna is electromagnetically coupled to the dual polarized far-field antenna. The near-field loop antenna includes two contacts for electrically connecting to a chip.

Dual polarized UHF antenna

Described are RFID structures. An RFID structure includes a planar gasket layer with a tensile modulus value less than 5 Gpa. The gasket layer defines a perimeter including one or more guide indentations. The RFID structure also includes a loop antenna assembly positioned within the gasket layer. The loop antenna includes an antenna track, and at least two contact pads. The loop antenna assembly surrounds an area that can be more than at least 10% of a total area defined by an outer perimeter of the gasket layer. The RFID structure also includes an integrated circuit unit coupled to the at least two contact pads.

RFID gasket structure

Described are RFID structures and methods for forming RFID structures. An RFID structure includes a loop antenna assembly, an antenna substrate supporting the loop antenna assembly, and a shielding layer parallel with a plane defined by the antenna substrate. The loop antenna assembly has a stand-alone resonant frequency of fabove or below a standardized reader frequency range. The loop antenna includes an antenna track and at least two contact pads. The loop antenna assembly in combination with the shielding layer has a resonant frequency of fbelow the standardized reader frequency range. If positioned against a metallic surface, the loop antenna assembly in combination with the shielding layer has a resonant frequency within the standardized reader frequency range.

RFID label with shielding element

An apparatus for screening the magnetic field of a transponder is described, which apparatus comprises, in a first area section, at least one flat antenna structure which comprises conductor tracks for conducting current in a direction of current flow and has an application-specific extent, wherein the apparatus comprises a second area section or carrier to which strips of a highly permeable screening material are applied such that they are oriented with respect to one another in a predetermined manner, wherein the second area section is arranged parallel to the first area section. In order to effectively screen the magnetic field which is beamed in from the outside, for instance by a reader, and in order to effectively screen the magnetic field which is generated by the antenna structure of the transponder itself following excitation, and in order to reduce eddy current losses in a metal area arranged underneath, the highly permeable screening material has either anisotropic permeability, wherein increased permeability is provided in the direction of current flow, in particular in the direction of the conductor tracks of important sections of the antenna structure, or else provides for the strips to be oriented parallel to one another in important sections, wherein the longitudinal edges of the strips are provided in the direction of current flow, in particular in the direction of the conductor tracks of important sections of the antenna structure.

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Kottgeisering, Germany

Stefan Mieslinger