Ihp Gmbh-Innovations for High Performance Microelectronics/leibniz-Institut Fur Innovative Mikroelektronik

Stefan Lischke

Dieter Knoll

Lars Zimmermann

Yuji Yamamoto

Andreas Trusch

A diode is described which comprises a light-sensitive germanium region () located on a waveguide () made of silicon or silicon germanium and which has lateral dimensions in a direction transverse to a direction of light propagation in the waveguide that are identical or at most 20 nm per side shorter in comparison with the waveguide.

High-speed germanium PIN photodiode

A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form.

Growing community of inventors

Frankfurt-am-Main, Germany

Stefan Lischke