Infineon Technologies Ag

Stefan Lipp

Thomas Detzel

Hubert Maier

Johann Rieger

Hans Peter Zeindl

Methods for forming an integrated semiconductor circuit arrangement are disclosed. In one embodiment, a semiconductor circuit with a first semiconductor circuit region and with a second semiconductor circuit region is formed in each case in a semiconductor material region. A first metallization layer is applied to the structure thus obtained. A protective material region is then formed. A second metallization layer is subsequently applied, which is then also patterned. Afterward, the first metallization layer together with the protective material region is then patterned.

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Neumarkt, Germany

Stefan Lipp