Abb Technology Ag

Abb Schweiz Ag

Abb Research Ltd.

Abb Schweiz Holding Ag

Other

Asea Brown Boveri Ag

Stefan Linder

Munaf Rahimo

Gunnar Asplund

Jiuping Pan

Peter Karl Steimer

Arnost Kopta

Bo Bijlenga

Sandeep Bala

Alfred P Gnadinger

Didier Cottet

Oscar Apeldoorn

Joseph Alexander Carr

Hans Rudolf Zeller

Norbert Galster

Georg Traxler-Samek

Steve Aubert

Fabian Zwick

Patrick Erne

Friedrich Winkler

A pumped-storage power plant, such as an electric unit can include a frequency converter and a rotating electric synchronous machine, the machine being provided in a cavern. The frequency converter can include at least two elements which can be used as inverters or as rectifiers according to the operating mode of the machine, for example during the operation of the motor or during the operation of the generator. The machine-side element can be provided within the cavern, and the network-side element can be provided outside of the cavern.

Electric unit for a pumped-storage power plant having components within and outside of an underground cavern

A semiconductor power module includes at least two sub modules. The sub modules include at least one respective transistor having a collector, an emitter, and a gate. The module includes a connection arrangement having a collector terminal unit for connecting the collectors of the at least two sub modules collectively to external circuit components, at least two emitter terminal units for connecting the respective emitters of the at least two sub modules individually to external circuit components, and at least two gate terminal units for connecting the respective gates of the at least two sub modules individually to external circuit components.

Connection arrangement for semiconductor power modules

An energy generation system includes a turbine, an electric generator, a step-up transformer, and a converter. The turbine is operable to extract energy from a fluid flow and convert the extracted energy into mechanical energy. The electric generator is operable to convert the mechanical energy from the turbine into AC electrical energy. The step-up transformer is operable to transfer the AC electrical energy at a lower voltage from the electric generator to a higher voltage. The converter is operable to convert the AC electrical energy at the higher voltage to DC electrical energy. The converter includes a converter leg for a phase of the AC electrical energy. The converter leg has an upper arm with a first plurality of sub-modules and a lower arm with a second plurality of sub-modules. Each sub-module is operable to function as a controlled voltage source.

Turbine-based energy generation system with DC output

In order to produce a power semiconductor for operation at high blocking voltages, there is produced on a lightly doped layer having a doping of a first charge carrier type a medium-doped layer of the same charge carrier type. A highly doped layer is produced at that side of the medium-doped layer which is remote from the lightly doped layer, of which highly doped layer a part with high doping that remains in the finished semiconductor forms a second stop layer, wherein the doping of the highly doped layer is higher than the doping of the medium-doped layer. An electrode is subsequently indiffused into the highly doped layer. The part with low doping that remains in the finished semiconductor forms the drift layer and the remaining medium-doped part forms the first stop layer.

Power semiconductor

In an insulated gate bipolar transistor, an improved safe operating area capability is achieved according to the invention by a two-fold base region comprising a first base region (), which is disposed in the channel region () so that it encompasses the one or more source regions (), but does not adjoin the second main surface underneath the gate oxide layer (), and a second base region () is disposed in the semiconductor substrate () underneath the base contact area () so that it partially overlaps with the channel region () and with the first base region ().

IGBT cathode design with improved safe operating area capability

In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail harrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base&mdash;resulting from the wafer&mdash;from anode to cathode.

Method for fabricating semiconductor component with an optimized thickness

In a method of manufacturing a semiconductor element ( ) having a cathode ( ) and an anode ( ), the starting material used is a relatively thick wafer ( ) to which, as a first step, a barrier region ( ) is added on the anode side. It is then treated on the cathode side, and the thickness of the wafer ( ) is then reduced on the side opposite to the cathode ( ), and an anode ( ) is produced on this side in a further step. The result is a relatively thin semiconductor element which can be produced economically and without epitaxial layers.

Method of manufacturing a semiconductor device having a cathode and an anode from a wafer

The power semiconductor module ( ) comprises a housing ( ), a covering panel ( ) and at least two submodules ( ). The submodules ( ) each comprise at least one semiconductor chip, which has two main electrodes which are electrically conductively connected to main connections ( ) of the submodules. The submodules ( ) are arranged alongside one another, and one of their two main surfaces is pressed against the covering panel ( ) of the module. The submodules are electrically connected in series. The maximun blocking voltage of the module is doubled by connecting the submodules, which are arranged alongside one another, in series. This reduces the length and the costs of the stack for hihg-voltage switch since fewer components are required for the same blocking voltages, in particular fewer modules and cooling elements.

Power semiconductor module

In a process for fabricating a semiconductor component, in particular a semiconductor diode, a semiconductor substrate ( ) is provided with metal layers ( ) in order to form electrode terminals and with passivation ( ), and is exposed to particle irradiation (P) in order to adjust the carrier lifetime. This being the case, at least the metal layer ( ) on the irradiation side and the passivation ( ) are not applied until after the particle irradiation (P). As a result, a continuous defect region ( ), which precludes undesired edge effects, is obtained in the semiconductor substrate ( ).

Process for fabricating a semiconductor component

A radio frequency identification device (RFID) has an antenna formed on a chip. The chip has backside and a front side coated with conductive traces, which are connected through conductive traces on the sides of two elongate through-hole slots formed on the chip to form an operative coil having the chip as a core. In one embodiment, the antenna chip may be stacked above an integrated circuit. In another embodiment, the integrated circuit may be formed on the antenna chip. The antenna chip may include a high magnetic permeability layer to increase the inductance of the coil, a capacitor to tune the coil to a desired frequency, and a coupling capacitor to power the integrated circuit. As well as the specific application disclosed, an inductance useful in numerous applications can be formed according to the above structure.

Radio frequency identification transponder having integrated antenna

In a gate turn-off thyristor (GTO) with homogeneous anode, emitter and stop layer, a device which short-circuit the stop layer with the anode is provided in an edge termination region. As a result, in a reverse-biased state, the GTO has a structure of a diode in the edge region and amplification of a reverse current is obviated. With this structure, thermal loading in the edge region is reduced, as the GTO tolerates a higher operating temperature at a predetermined voltage.

Growing community of inventors

Zofingen, Switzerland

Stefan Linder