Applied Materials, Inc.

Stefan Keller

Dieter Haas

Jungmin Lee

Stefan Bangert

Si Kyoung Kim

Takuji Kato

Jose Manuel Dieguez-Campo

Wen-Hao Wu

Yu-Hsin Lin

Byung-Sung Kwak

Chung-Chia Chen

Ji Young Choung

Ji-Young Choung

Stefan Hein

Joe Griffith Cruz

Wolfgang Buschbeck

Yu-hsin Lin

Uwe Schüssler

Bipin Thakur

Frank Schnappenberger

Michael König

Takashi Anjiki

Marcus Bender

Ravindra Patil

Chung-chia Chen

Uwe Schüβler

Guenter Klemm

Anke Hellmich

Vikas Gujar

Juergen Bruch

Karl-Albert Keim

Jae Won Lee

Byung-sung Leo Kwak

Uwe SCHÜßLER

Norbert Spatz

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed on and extending laterally past a base structure disposed on the PDL structure. Each second overhang is defined by a top structure disposed on and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed on the HIL material and extends under the first overhang.

OLED panel with advanced sub-pixel overhangs

A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.

Evaporator, deposition arrangement, deposition apparatus and methods of operation thereof

The present disclosure provides a method for cleaning a vacuum system used in the manufacture of OLED devices. The method includes performing pre-cleaning for cleaning at least a portion of the vacuum system, and performing plasma cleaning using a remote plasma source.

Method for cleaning a vacuum system used in the manufacture of OLED devices, method for vacuum deposition on a substrate to manufacture OLED devices, and apparatus for vacuum deposition on a substrate to manufacture OLED devices

Embodiments described herein relate to a device including a substrate, a plurality of adjacent pixel-defining layer (PDL) structures disposed over the substrate, and a plurality of sub-pixels. Each sub-pixel includes adjacent first overhangs, adjacent second overhangs, an anode, a hole injection layer (HIL) material, an additional organic light emitting diode (OLED) material, and a cathode. Each first overhang is defined by a body structure disposed over and extending laterally past a base structure disposed over the PDL structure. Each second overhang is defined by a top structure disposed over and extending laterally past the body structure. The HIL material is disposed over and in contact with the anode and disposed under the adjacent first overhangs. The additional OLED material is disposed over the HIL material and extends under the first overhang.

An AC power connector for connecting an AC power supply with a device is provided. The AC power connector includes at least one first element connectable with the AC power supply and at least one second element connectable with the device, the first element and the second elements being arranged at a first distance with respect to each other for defining a capacitance, wherein the at least one first element and the at least one second element are rotatable with respect to each other, wherein the first element and the second element are configured for a transfer of an AC power between the at least one first element and the at least one second element.

AC power connector, sputtering apparatus and method therefor

A sputter deposition source for sputter deposition in a vacuum chamber is described. The source includes a wall portion of the vacuum chamber; a target providing a material to be deposited during the sputter deposition; an RF power supply for providing RF power to the target; a power connector for connecting the target with the RF power supply; and a conductor rod extending through the wall portion from inside of the vacuum chamber to outside of the vacuum chamber, wherein the conductor rod is connected to one or more components inside of the vacuum chamber and wherein the conductor rod is connected to the RF power supply outside of the vacuum chamber to generate a defined RF return path through the conductor rod.

Sputter deposition source, apparatus for sputter deposition and method of assembling thereof

Methods for depositing films using hot wire chemical vapor deposition (HWCVD) processes are provided herein. In some embodiments, a method of operating an HWCVD tool may include providing hydrogen gas (H) to a filament disposed in a process chamber of the HWCVD tool for a first period of time; and flowing current through the filament to raise the temperature of the filament to a first temperature after the first period of time.

Methods for enhancing tantalum filament life in hot wire chemical vapor deposition processes

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Mainaschaff, Germany

Stefan Keller