Saint-gobain Glass France

Bengbu Design & Research Institute for Glass Industry

Infineon Technologies Ag

Infineon Technologies Austria Ag

Cnbm Research Institute for Advanced Glass Materials Group Co., Ltd.

(cnbm) Bengbu Design Research Institute for Glass Industry Co. Ltd

Stefan Jost

Joerg Palm

Martin Fuerfanger

Jörg Palm

Thomas Happ

Carsten Ahrens

Ulrich Krumbein

Stephan Pindl

Stephan Pohlner

Thomas Dalibor

Martin Fürfanger

Wolfgang Friza

Dang Cuong Phan

Stefan Geissler

Soenke Pirk

Jorg Palm

Matthias Reinwald

Roland Dietmüller

Robert Lechner

Patrick Eraerds

Jessica Hartwich

Rajneesh Verma

Martin FÜRFANGER

Roland Dietmueller

An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.

IR emitter with glass lid

A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

Method and structure for sensors on glass

A MEMS device is provided. The MEMS device includes a membrane, and at least one electrode arranged at a distance from the membrane. The at least one electrode includes a layer stack. The layer stack includes a first insulation layer, a first conductive layer arranged thereabove, a second insulation layer arranged thereabove, a second conductive layer arranged thereabove, and a third insulation layer arranged thereabove.

MEMS device and method for producing a MEMS device

The present invention relates to a device for heat treating an object, in particular a coated substrate, with an in particular gas-tightly sealable housing that encloses a hollow space, wherein the hollow space has a separating wall, by which the hollow space is divided into a process space for accommodating the object and an intermediate space, wherein the separating wall has one or a plurality of openings, which are implemented such that the separating wall acts as a barrier for the diffusion out of the process space into the intermediate space of a gaseous substance generated in the process space by the heat treatment of the object. The housing has at least one housing section coupled to a cooling device for its active cooling, wherein the separating wall is arranged between the object and the coolable housing section. The invention further relates to the use of a separating wall as a diffusion barrier in a device for heat treating an object as well as a corresponding method for heat treating an object.

Device and method for heat treating an object

The present invention relates to a system for processing coated substrates, having the following features: at least one evacuable process box for accommodating at least one substrate with a gas-tightly sealable housing, which forms a hollow space, wherein the housing comprises at least one housing section, which is implemented such that the substrate is thermally treatable by incident electromagnetic thermal radiation, wherein the housing has at least one housing section coupleable to a cooling device for its cooling and at least one housing section not coupled to the cooling device, wherein the hollow space is divided by at least one separating wall into a process space for accommodating the substrate and an intermediate space, wherein the separating wall has one or a plurality of openings and is arranged between the substrate and the housing section coupled to the cooling device, and wherein the housing is provided with at least one sealable gas passage that opens into the hollow space, for evacuating and introducing gas into the hollow space; a cooling device for cooling the process box housing section coupleable to the cooling device; at least one loading/unloading unit for loading and/or unloading the process box; at least one heating unit for heating the substrate in the process box; at least one cooling unit for cooling the substrate in the process box; at least one pumping-out device for draining the hollow space of the process box; at least one gas supply device for supplying the hollow space of the process box with at least one gas; at least one transport mechanism, which is implemented for the purpose of executing a relative movement between, on the one hand, the process box and, on the other, the heating, cooling, and loading/unloading unit.

System and method for processing substrates

The present invention relates to a method for producing a compound semiconductor (), which comprises the following steps:

Method for producing a compound semiconductor, and thin-film solar cell

The present invention relates to a layer system () for thin-film solar cells with an absorber layer () that contains a chalcogenide compound semiconductor and a buffer layer () that is arranged on the absorber layer (), wherein the buffer layer () contains NaInSClwith 0.05&#x2266;x&#x3c;0.2 or 0.2&#x3c;x&#x2266;0.5, 1&#x2266;y&#x2266;2, and 0.6&#x2266;x/z &#x2266;1.4.

[object Object]

A transportable process box for processing substrates coated on one side is described. The box has a base for the placement of a first substrate in a manner such that the latter is supported over the full area, a frame, a cover which is placed onto the frame, and an intermediate element which is arranged between the base and the cover and is intended for the placement of a second substrate in a manner such that the latter is supported over the full area. Arrangements and methods for processing substrates are also described.

Process box, arrangements and methods for processing coated substrates

A device for forming a reduced chamber space, which is a process box or a process hood, containing an apparatus, which positions at least two multilayer bodies each including a surface to be processed, wherein the apparatus is designed such that the multilayer bodies are opposite to each other, wherein the surfaces to be processed are facing away from each other such that the multilayer bodies can be processed as a multilayer body arrangement in a processing system. In addition, a method for positioning the two multilayer bodies comprising a surface to be processed, with the two multilayer bodies disposed in such a device such that multilayer bodies are opposite each other, wherein the surfaces to be processed are facing away from each other, such that the multilayer bodies are processable as a multilayer body arrangement in a processing system.

Device for forming a reduced chamber space, and method for positioning multilayer bodies

The invention relates to a device for depositing a layer made of at least two components on an object, with a deposition chamber for disposing the object, at least one source with material to be deposited, as well as at least one device for controlling the deposition process, implemented such that the concentration of at least one component of the material to be deposited can be modified in its gas phase prior to deposition on the substrate by selective binding of a specified quantity of the at least one component, wherein the selectively bound quantity of the at least one component can be controlled by modifying at least one control parameter that is actively coupled to a binding rate or the component. It further relates to a device for depositing a layer made of at least two components on an object, wherein a device for controlling the deposition process has at least one gettering element made of a reactive material, wherein the reactive material includes copper and/or molybdenum. It further relates to a method for depositing a layer made of at least two components on an object, wherein a selectively bound quantity of at least one component is controlled by modifying a binding rate of a device for controlling the deposition process.

Device and method for precipitating a layer on a substrate

The invention relates to a multilayer body arrangement, which comprises at least two multilayer bodies each having at least one surface to be processed as well as at least one device for positioning the multilayer bodies, wherein the device is configured such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs. It further relates to a system for processing multilayer bodies with such a multilayer body arrangement, as well as a method for processing multilayer bodies, wherein the multilayer bodies are disposed such that the respective surfaces to be processed are opposite each other and thus form a quasi-closed processing space disposed between the surfaces, in which the processing occurs.

Arrangement, system, and method for processing multilayer bodies

A method for producing a compound semiconductor composed of pentanary kesterite/stannite of the type CuZnSn(S,Se)is described. The method has the following steps: producing at least one precursor layer stack consisting of a first precursor layer and a second precursor layer; thermally treating the at least one precursor layer stack in a process chamber; and feeding at least one process gas into the process chamber during the thermal treatment of the at least one precursor layer stack. Furthermore, a thin-film solar cell with an absorber consisting of the pentanary compound semiconductor CuZnSn(S,Se)on a body is described.

Growing community of inventors

Munich, Germany

Stefan Jost