Ams Ag

Stefan Jessenig

Franz Schrank

Jordi Teva

Martin Schrems

Jochen Kraft

Rainer Minixhofer

Thomas Bodner

Bernhard Löffler

Jörg Siegert

Georg Parteder

Frederic Roger

Günther Koppitsch

Ewald Wachmann

Victor Sidorov

Ewald Stueckler

Guenther Koppitsch

Ewald Stückler

A dielectric layer is arranged on a main surface of a semiconductor substrate, a metal layer providing a contact area is embedded in the dielectric layer, a top metal is arranged on an opposite main surface of the substrate, and an electrically conductive interconnection through the substrate, which comprises a plurality of metallizations arranged in a plurality of via holes, connects the contact area with the top metal. The plurality of metallizations is surrounded by an insulating layer penetrating the substrate.

Semiconductor device with through-substrate via and its method of manufacture

A method for manufacturing a semiconductor device comprises the steps of providing a semiconductor body with a main plane of extension, and forming a trench in the semiconductor body from a top side of the semiconductor body in a vertical direction which is perpendicular to the main plane of extension of the semiconductor body. The method further comprises the steps of coating inner walls of the trench with an isolation layer, depositing a metallization layer within the trench, and depositing a passivation layer within the trench such that an inner volume of the trench is free of any material, wherein inner surfaces that are adjacent to the inner volume are treated to be hydrophobic at least in places. Furthermore, a semiconductor device is provided.

Method for manufacturing a semiconductor device and semiconductor device

The lateral single-photon avalanche diode comprises a semiconductor body comprising a semiconductor material of a first type of electric conductivity, a trench in the semiconductor body, and anode and cathode terminals. A junction region of the first type of electric conductivity is located near the sidewall of the trench, and the electric conductivity is higher in the junction region than at a farther distance from the sidewall. A semiconductor layer of an opposite second type of electric conductivity is arranged at the sidewall of the trench adjacent to the junction region. The anode and cathode terminals are electrically connected with the semiconductor layer and with the junction region, respectively. The junction region may be formed by a sidewall implantation.

Lateral single-photon avalanche diode and method of producing a lateral single-photon avalanche diode

Through the intermetal dielectric () and the semiconductor material of the substrate () a contact hole is formed, and a contact area of a connection metal plane () that faces the substrate is exposed in the contact hole. A metallization () is applied, which forms a connection contact () on the contact area, a through-contact () in the contact hole and a connection contact () on a contact area facing away from the substrate and/or on a vertical conductive connection () of the upper metal plane ().

Method for producing a semiconductor component with a through-contact and semiconductor component with through-contact

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Stefan Jessenig