Shipley Company LLC

Rohm & Haas Electronic Materials LLC

Stefan J Caporale

George G Barclay

Cheng-Bai Xu

Cong Liu

Jong Keun Park

Wang Yueh

Choong-Bong Lee

Cecily Andes

Robert J Kavanagh

Joseph Mattia

Zhibiao Mao

Jason A DeSisto

Nick Pugliano

Deyan Wang

Kathleen M O'Connell

Li Jia

Dana A Gronbeck

Michael N Gaudet

William Andrew Burke

Gerd Pohlers

Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

Pattern formation methods

Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

Photoresist overcoat compositions

New photoresists are provided that comprise a multi-keto component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride, hafnium silicate, zirconium silicate and other inorganic surfaces.

Photoresists and methods for use thereof

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions and processes for immersion lithography

The invention includes new polymers and methods for providing such polymers and photoresists that comprises the polymers. Methods of the invention include those that comprise providing a reaction mixture and adding over the course of a polymerization reaction one or more polymerization reagents to the reaction mixture to provide the polymer. Photoresists containing a polymer of the invention can exhibit significantly improved lithographic properties.

Polymers, processes for polymer synthesis and photoresist compositions

The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

Copolymers and photoresist compositions comprising same

The invention includes polymers that contain a polymers of the invention contain one or more 1) carbonate units and/or 2) a lactone provided by a monomer having a ring oxygen adjacent to the monomer vinyl group. The invention also provides photoresists that contain such polymers, particularly for imaging at short wavelengths such as sub-200 nm.

Polymers and photoresist compositions comprising same

The invention is for a process of removing dissolved heavy metal cation contaminants from an organic solution. The process of the invention involves providing a mixture of a chelating ion exchange resin modified by removal of sodium ions therefrom and an anion exchange resin and contacting said organic solution with said exchange resins for a time sufficient to remove ionic metal impurities and acids. The invention is useful for removal of ionic contaminants from organic solutions requiring high purity.

Growing community of inventors

Austin, TX, United States of America

Stefan J Caporale