Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Stefan Illek

Thomas Schwarz

Matthias Sabathil

Norwin Von Malm

Ralph Wirth

Andreas Ploessl

Ines Pietzonka

Walter Wegleiter

Andreas Biebersdorf

Petrus Sundgren

Christoph Klemp

Frank Singer

Siegfried Herrmann

Jürgen Moosburger

Felix Feix

Ana Kanevce

Christian Berger

Tansen Varghese

Alexander Linkov

Klaus Streubel

Berthold Hahn

Patrick Rode

Lutz Hoeppel

Hans-Jürgen Lugauer

Wilhelm Stein

Peter Nagel

Stefan Groetsch

Dominik Scholz

Andreas Plössl

Peter Stauss

Laura Kreiner

Tilman Ruegheimer

Wolfgang Mönch

Dieter Eissler

Wolfgang Moench

Hans Lindberg

Gudrun Diepold

Herbert Brunner

Alexander F Pfeuffer

Uwe Strauss

Korbinian Perzlmaier

Stefan Grötsch

Dominik Eisert

Karl Weidner

Wolfgang Schmid

Tony Albrecht

Martin Strassburg

Bernd Barchmann

Isabel Otto

Rainer Butendeich

Alvaro Gomez-Iglesias

Ulrich Steegmüller

Matthias Goldbach

Roland Schulz

Juergen Moosburger

Bruno Jentzsch

Albrecht Kieslich

Stefan Stegmeier

Robert Walter

Andreas Plößl

Magnus Ahlstedt

Vincent Grolier

Alexander Tonkikh

Juergen Holz

Juergen Dachs

Jürgen Dachs

Alexander Heindl

Wolfgang Schnabel

Thomas Bleicher

Heiko Unold

Walter Wegletter

Ralf Wirth

A semiconductor structure comprises an n-doped first layer, a p-doped second layer doped with a first dopant, and an active layer disposed between the n-doped first layer and the p-doped second layer and having at least one quantum well. The active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region. Here, the plurality of first optically active regions are arranged in a hexagonal pattern spaced apart from each other. The at least one quantum well in the active region comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region, the band gap being modified, in particular, by quantum well intermixing. The at least one second region encloses the plurality of first optically active regions.

Optoelectronic component, semiconductor structure and method

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface.

Method for producing a semiconductor component comprising performing a plasma treatment, and semiconductor component

A radiation-emitting semiconductor chip may include a semiconductor body, a reflector, at least one cavity, and a seal. The semiconductor body may include an active region configured to generate electronic radiation. The reflector may be configured to reflect a portion of the electromagnetic radiation. The cavity may be filled with a material having a refractive index not exceeding 1.1. The seal may be impermeable to the material. The cavity may be arranged between the reflector and the semiconductor body, and the seal may cover the underside of the reflector.

Radiation-emitting semiconductor chip and a method for producing a radiation-emitting semiconductor chip

The invention relates to various aspects of a &#x3bc;-LED or a &#x3bc;-LED array for augmented reality or lighting applications, in particular in the automotive field. The &#x3bc;-LED is characterized by particularly small dimensions in the range of a few &#x3bc;m.

&#x3bc;-LED, &#x3bc;-LED device, display and method for the same

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45&#xb0; to a resonator axis with a tolerance of at most 10&#xb0;. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

Semiconductor laser

An optoelectronic component may include a semiconductor body and a radiation transmissive bonding layer. The semiconductor body may include a first region of a first conductivity type, a second region of a second conductivity type, and an active region. The active region may be disposed between the first region and the second region. The first region may include a recess and a contact region adjacent to the recess. The active region may be arranged to emit electromagnetic radiation. The semiconductor body may have a first radiation exit surface at a main surface of the second region remote from the active region, and a portion of the electromagnetic radiation may exit the semiconductor body through the first radiation exit surface. The semiconductor body may include a first electrical connection layer and a second electrical connection layer where the second electrical connection layer is arranged at least partially in the recess.

Optoelectronic component and method for producing an optoelectronic component

An optoelectronic component includes an optoelectronic semiconductor chip having a radiation-emitting face; and an optical element arranged over the radiation-emitting face, wherein the optical element includes a material in which light-scattering particles are embedded, and a concentration of the embedded light-scattering particles has a gradient forming an angle not equal to 90&#xb0; with the radiation emission face.

Optoelectronic component, optoelectronic arrangement, method of producing an optical element, and method of producing an optoelectronic component

A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Light source comprising a number of semi-conductor components

A method of operating a semiconductor light source, wherein the semiconductor light source includes at least one first light source that generates blue light; at least one second light source that generates bluish-white light; at least one third light source that produces greenish-white light; at least one fourth light source that generates red light, wherein no further light sources are present, the light sources can be controlled independently of one another, the light sources are operated in a continuous wave mode and not by pulse width modulation, and the semiconductor light source is operated such that all in all white mixed light having a tunable correlated color temperature is generated, and each of the light sources is operated exclusively with at least 5% of an intended maximum current in the switched-on state of the semiconductor light source so that an undercurrent operation of the light sources is prevented.

Method of operating a semiconductor light source, and semiconductor light source

A display device is disclosed. In an embodiment a display device includes at least one connection carrier comprising a multiplicity of switches and a multiplicity of light-emitting diode chips, wherein each light-emitting diode chip is mechanically fixed and electrically connected to the connection carrier, wherein each switch is designed for driving at least one light-emitting diode chip, and wherein the light-emitting diode chips are imaging elements of the display device.

Display device

Disclosed is a method for producing a plurality of semiconductor chips (). A composite (), which comprises a carrier () and a semiconductor layer sequence (), is provided. Separating trenches () are formed in the semiconductor layer sequence () along an isolation pattern (). A filling layer () limiting the semiconductor layer sequence () toward the separating trenches () is applied to a side of the semiconductor layer sequence () facing away from the carrier (). Furthermore, a metal layer () adjacent to the filling layer () is applied in the separating trenches (). The semiconductor chips () are isolated by removing the metal layer () adjacent to the filling layer () in the separating trenches (). Each isolated semiconductor chip () has one part of the semiconductor layer sequence (), and of the filling layer (). Also disclosed is a semiconductor chip ().

Method for producing a plurality of semiconductor chips and semiconductor chip

An optoelectronic component includes at least one first carrier with at least two light emitting diodes, wherein the diodes have electrical connections, the electrical connections are led to contact areas, and the contact areas are arranged on an underside of the first carrier; and a second carrier, wherein further contact areas are arranged on a top side of the second carrier, the first carrier bears by the underside on the top side of the second carrier and fixedly connects to the second carrier, and an electronic circuit for open-loop and/or closed-loop control of the power supply of the diodes is integrated in the second carrier.

Optoelectronic component with protective circuit

Growing community of inventors

Donaustauf, Germany

Stefan Illek