Siemens Aktiengesellschaft

Infineon Technologies Ag

Stefan Hien

Michael Sebald

Klaus Elian

Ernst-Christian Richter

A method for creating negative resist structures is described. In the method, a chemically fortified resist is applied to a substrate, dried, irradiated with light, x-ray, electron or ion beams, heated, developed using a aqueous-alkaline developer solution and siliconized from a liquid phase. The resist contains the following constituent: a polymer, whose polarity is modified by acidic action and which contains carboxylic acid anhydride groups, preferably in latent form; a compound which releases an acid as a result of thermal treatment; a photoreactive compound, from which a base is created during the irradiation with light, x-ray, electron or ion beams; a solvent; and optionally one or more additives.

Method for producing resist structures

A bottom resist for the two-layer technique includes a phenolic base polymer, a thermoactive compound which above a temperature of 100&deg; C. releases a sulfonic acid, and a solvent.

Bottom resist

Film-forming, functionalized polymers having 1,2-dicarboxylic acid monoester groups have at least two polymer units, one of which is acid-labile and hydrolysis-stable and the other is thermally stable. These polymers are used in particular in photoresists.

Film-forming polymers

A radiation-sensitive mixture contains the following components:

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Stefan Hien