Texas Instruments Corporation

Texas Instruments Incorporated Deutschland, Gmbh

Stefan Herzer

Neil Gibson

Antonio Priego

Michael Couleur

Bernhard Wicht

Sumeet Prakash Kulkarni

Syed Wasif Mehdi

Jochen Neidhardt

Binghua Hu

Alexei Sadovnikov

Christopher Daniel Manack

Abbas Ali

Michael Lueders

Patrick Francis Thompson

Yanbiao Pan

Ferdinand Stettner

Rakshit Agrawal

Erich Bayer

Joerg Kirchner

Gerhard Thiele

Laszlo Balogh

Konrad Wagensohner

Maciej Piotr Jankowski

Johann Erich Bayer

Manuel Wiersch

Maik Peter Kaufmann

Michael Uwe Schlenker

Zhangyi Xie

Nicola Florio

Ting-Li Hsu

Qiao Yang

A self-biasing circuit for power converters is disclosed. In an example, an apparatus includes a first transistor coupled between an inductor terminal and a ground terminal, and a second transistor coupled between the inductor terminal and a bias terminal. The first transistor has a first control terminal, and the second transistor has a second control terminal. In an example, the first and second transistors are configured to split a current at the inductor terminal. The apparatus further includes a controller having first and second control outputs, where the first control output is coupled to the first control terminal, the second control output is coupled to the second control terminal.

Bias generation for power converter

A ground reference circuit to generate a ground reference for a voltage reference circuit includes a resistor coupled in series with a transistor via a current mirror. The resistor is coupled between a ground reference terminal of the voltage reference circuit and a ground terminal of a power converter. The transistor control terminal is configured to receive a pulse width modulation (PWM) control signal having a duty cycle similar to a switching element duty cycle of the power converter. The current mirror circuit is coupled between a current terminal of the transistor and the ground reference terminal. A controller configured to control the switching element duty cycle may include the ground reference circuit, along with the voltage reference circuit, and a PWM circuit configured to determine the switching element duty cycle based on a comparison between a reference voltage provided by the voltage reference circuit and the converter output voltage.

Ground reference generator for power converter

A gate driver circuit includes a charge pump circuit, a gate pull-up transistor, a resistor, and a capacitor. The charge pump circuit includes an output. The gate pull-up transistor includes a first current terminal, a second current terminal, and a control terminal. The first current terminal is coupled to the output of the charge pump circuit. The second current terminal is coupled to a gate drive output terminal. The resistor is coupled between the power input terminal and the control terminal. The capacitor is coupled between the control terminal and a ground terminal.

Low noise gate driver circuits

In some examples, a circuit includes a resistor network, a filter, a current generator, and a capacitor. The resistor network has a resistor network output and is adapted to be coupled between a switch terminal of a power converter () and a ground terminal. The filter has a filter input and a filter output, the filter input coupled to the resistor network output. The current generator has a current generator output and first and second current generator inputs, the first current generator input configured to receive an input voltage and the second current generator input coupled to the filter output. The capacitor is coupled between the current generator output and the ground terminal.

Adaptive gain and bandwidth ramp generator

A semiconductor die includes a substrate and an integrated circuit provided on the substrate and having contacts. An electrically conductive layer is provided on the integrated circuit and defines electrically conductive elements electrically connected to the contacts. Electrically conductive interconnects coupled with respective electrically conductive elements. The electrically conductive interconnects have at least one of different sizes or shapes from one another.

Interconnect for electronic device

A voltage regulation circuit includes a switching output terminal, a high-side output transistor, a low-side output transistor, a high-side replica transistor, a low-side replica transistor, and a comparator circuit. The high-side output transistor is configured to drive the switching output terminal. The low-side output transistor is configured to drive the switching output terminal. The high-side replica transistor is coupled to the high-side output transistor. The low-side replica transistor is coupled to the high-side replica transistor and the low-side output transistor. The comparator circuit is coupled to the high-side replica transistor and the low-side replica transistor, and is configured to compare a signal received from both the high-side replica transistor and the low-side replica transistor to a ramp signal.

Voltage regulation circuit

In some examples, a circuit comprises a first field effect transistor (FET) having a first gate adapted to couple to a reference voltage source, a first source coupled to a first current source, and a first drain coupled to a second current source. The circuit comprises a second FET having a second gate coupled to the first drain, a second drain coupled to the first current source, and a second source coupled to a first resistor. The circuit comprises a third FET having a third gate adapted to couple to a feedback loop of a voltage converter, a third source coupled to a third current source, and a third drain coupled to a fourth current source. The circuit comprises a fourth FET having a fourth gate coupled to the third drain, a fourth drain coupled to the third current source, and a fourth source coupled to a second resistor.

Compensation in a voltage mode switch-mode converter

A semiconductor device with an isolation structure and a trench capacitor, each formed using a single resist mask for etching corresponding first and second trenches of different widths and different depths, with dielectric liners formed on the trench sidewalls and polysilicon filling the trenches and deep doped regions surrounding the trenches, including conductive features of a metallization structure that connect the polysilicon of the isolation structure trench to the deep doped region to form an isolation structure.

Semiconductor device with deep trench isolation and trench capacitor

An integrated circuit comprising: a source comprising an output port; a set of serially-connected resistors electrically coupled to the output port of the source; a comparator comprising a first input port, a second input port, and an output port; a set of switches, each switch in the set of switches comprising a first terminal electrically coupled to the first input port of the comparator, and a second terminal electrically coupled to the set of serially-connected resistors; a current source comprising an output port electrically coupled to the second input port of the comparator; and a pin electrically coupled to the output port of the current source.

Integrated circuits with a set of serially-connected resistors

Voltage regulation replica transistors, comparator, ramp signal, and latch circuit

An electrical system includes: 1) a buck converter; 2) a battery coupled to an input of the buck converter; and 3) a load coupled to an output of the buck converter. The buck converter includes a high-side switch, a low-side switch, and regulation loop circuitry coupled to the high-side switch and the low-side switch. The regulation loop circuitry includes a comparator with preamplifier gain adjustment circuitry configured to adjust a preamplifier gain of the comparator based on an overdrive voltage.

Comparator with preamplifier gain adjustment based on overdrive voltage

A system comprises a DC-to-DC voltage converter, the DC-to-DC voltage converter comprising: a high-side FET comprising a gate, a source, and a drain; a node coupled to the source of the high-side FET; a low-side FET comprising a gate, a source, and a drain coupled to the node; and a controller coupled to the gate of the high-side FET to switch on and off the high-side FET, and coupled to the gate of the low-side FET to switch on and off the low-side FET, the controller configured to switch on the low-side FET for a time interval before switching on the high-side FET and to switch off the low-side FET before switching on the high-side FET.

DC-to-DC voltage converters with controllers to switch on a low-side FET for a time interval before switching on a high-side FET

A DC-to-DC voltage converter includes a converter input for receiving a DC voltage. A first switch is coupled between the input and a first node. A second switch is coupled between the first node and a ground. An inductor is coupled between the first node and a converter output. A capacitor is coupled between the converter output and ground. An output voltage synthesizer is coupled to the converter input and the converter output for synthesizing the voltage at the first node and for generating a control signal for at least one of the first switch and the second switch in response to the voltages at the converter input and the converter output.

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Marzling, Germany

Stefan Herzer