Friedrich-Alexander-Universitat Erlangen-Nürnberg

Stefan Hertel

Daniel Waldmann

Heiko B Weber

Florian Krach

Johannes Jobst

Michael Krieger

An electronic device () includes a semiconductor substrate () having a front surface (), a first electrode () and a second electrode () disposed on the front surface () of the substrate (), wherein the first electrode () and the second electrode () each have at least one epitaxial graphene monolayer (). The at least one epitaxial graphene monolayer () of the first electrode () forms an ohmic contact with the substrate () and the at least one epitaxial graphene monolayer () of the second electrode () forms a Schottky barrier with the substrate ().

Electronic device

A semiconductor component () comprising a semiconductor substrate () composed of silicon carbide and comprising separate electrodes () applied thereto, said electrodes each comprising at least one monolayer of epitaxial graphene () on silicon carbide, in such a way that a current channel is formed between the electrodes () through the semiconductor substrate ().

Growing community of inventors

Roth, Germany

Stefan Hertel