University of California

Advanced Micro Devices Corporation

Lawrence Livermore National Security, LLC

Stefan Hau-Riege

Christine Hau-Riege

Amit P Marathe

Henry N Chapman

Tiziana C Bond

John G Reynolds

Randall L Simpson

Sasa C Bajt

Peter J Nunes

Steven W Bond

Michael D Pocha

Richard A London

Eberhard A Spiller

Abraham Szoke

J Chance Carter

Chris C Walton

Steve Vernon

J Del Eckels

Stefano Marchesini

A low to moderate temperature heat source comprising a high temperature energy source modified to output low to moderate temperatures wherein the high temperature energy source modified to output low to moderate temperatures is positioned between two thin pieces to form a close contact sheath. In one embodiment the high temperature energy source modified to output low to moderate temperatures is a nanolaminate multilayer foil of reactive materials that produces a heating level of less than 200&#xb0; C.

Low to moderate temperature nanolaminate heater

A system in one embodiment includes a source for directing a beam of radiation at a sample; a multilayer mirror having a face oriented at an angle of less than 90 degrees from an axis of the beam from the source, the mirror reflecting at least a portion of the radiation after the beam encounters a sample; and a pixellated detector for detecting radiation reflected by the mirror. A method in a further embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample; not reflecting at least a majority of the radiation that is not diffracted by the sample; and detecting at least some of the reflected radiation. A method in yet another embodiment includes directing a beam of radiation at a sample; reflecting at least some of the radiation diffracted by the sample using a multilayer mirror; and detecting at least some of the reflected radiation.

Area X-ray or UV camera system for high-intensity beams

A system for x-ray imaging of a small sample comprising positioning a tamper so that it is operatively connected to the sample, directing short intense x-ray pulses onto the tamper and the sample, and detecting an image from the sample. The tamper delays the explosive motion of the sample during irradiation by the short intense x-ray pulses, thereby extending the time to obtain an x-ray image of the original structure of the sample.

Tamper to delay motion and decrease ionization of a sample during short pulse x-ray imaging

The invention applies techniques for image reconstruction from X-ray diffraction patterns on the three-dimensional imaging of defects in EUVL multilayer films. The reconstructed image gives information about the out-of-plane position and the diffraction strength of the defect. The positional information can be used to select the correct defect repair technique. This invention enables the fabrication of defect-free (since repaired) X-ray Mo&#x2014;Si multilayer mirrors. Repairing Mo&#x2014;Si multilayer-film defects on mask blanks is a key for the commercial success of EUVL. It is known that particles are added to the Mo&#x2014;Si multilayer film during the fabrication process. There is a large effort to reduce this contamination, but results are not sufficient, and defects continue to be a major mask yield limiter. All suggested repair strategies need to know the out-of-plane position of the defects in the multilayer.

Method for characterizing mask defects using image reconstruction from X-ray diffraction patterns

An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiOsubstrate, a Si film and an SiOfilm, the formation of guided wave structures is particularly simple.

Direct-patterned optical waveguides on amorphous silicon films

Electromigration permeability is determined for a layer material within an interconnect test structure comprised of a feeder line, a test line, and a supply line. A no-flux structure is disposed between the feeder line and the test line, and the layer material is disposed between the test line and the supply line. A respective current density and length product for each of the test line and the supply line is less than a critical Blech length constant, (J*L) . A net current density and length product (J*L) for the test line and the supply line is greater than the (J*L) . The electromigration permeability of the layer material is determined from an electromigration lifetime of the interconnect test structure with current flowing therein.

Determination of permeability of layer material within interconnect

For locating an extrusion from an interconnect, an extrusion monitor structure is formed to surround the interconnect and is separated from the interconnect by a dielectric material. A first via is coupled to the interconnect, and a second via is coupled to the extrusion monitor structure and separated from the first via by a via distance (L ). The extrusion is located at an extrusion site distance (L ) from the first via and between the first and second vias to short-circuit the interconnect to the extrusion monitor structure. A resistance (R ) between the first and second vias is measured, and the L is determined from a relationship with R , L , and resistivities and dimensions of the interconnect and the extrusion monitor structure.

System and method for determining location of extrusion in interconnect

For determining electromigration permeability of a layer material, a test line, a feeder line, and a cathode line of an interconnect test structure are formed with current flowing from the test line through the feeder line to the cathode line. A no-flux structure is disposed between the cathode line and the feeder line, and the layer material is disposed between the feeder line and the test line. A respective current density and length product of the feeder line and the test line is respectively less than and greater than a respective critical Blech length constant. An occurrence of a void within the feeder line or the test line indicates that the layer material is permeable or impermeable.

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Fremont, CA, United States of America

Stefan Hau-Riege