Osram Opto Semiconductors Gmbh

Osram Gmbh

Stefan Hartauer

Christian Rumbolz

Alfred Lell

Ion Stoll

Hans-Christoph Gallmeier

Jens Mueller

Sebastian Taeger

Robert Walter

Bernd Boehm

Gudrun Lindberg

Bjoern Hoxhold

Daniel Zaspel

Christoph Nelz

Christoph Stephan

A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

Method of producing an electronic component

The invention provides an optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component (), comprising the following steps: A) arranging at least one semiconductor chip () on a carrier (), B) applying an electrically insulating photoresist () to a top side () of the carrier () and to the semiconductor chip (), C) curing the photoresist () with a baking step, D) patterning the photoresist () by exposure, F) developing the photoresist (), wherein the photoresist () is removed at least from a radiation penetration surface () of the semiconductor chip (), G) again curing the photoresist () with a baking step, and H) applying an electrically conductive contact layer () to the photoresist (), wherein the electrically conductive contact layer () is in places at a distance (A) from a marginal surface () of the photoresist () which faces towards the semiconductor chip (), wherein the marginal surface () facing towards the semiconductor chip () is exposed in places.

Method for producing an optoelectronic semiconductor component and optoelectronic semiconductor component

A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Method for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip for the production of a radiation-emitting semiconductor component, and radiation-emitting semiconductor component

An edge-emitting semiconductor laser diode includes an epitactic semiconductor layer stack and a planarization layer. The semiconductor layer stack includes a main body and a ridge waveguide. The main body includes an active layer for generating electromagnetic radiation. The planarization layer embeds the ridge waveguide such that a surface of the ridge waveguide and a surface of the planarization layer form a flat main surface. A method for producing such a semiconductor laser diode is also disclosed.

Edge-emitting semiconductor laser diode and method for producing the same

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Wolfsegg, Germany

Stefan Hartauer