Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Stefan Grötsch

Georg Bogner

Joachim Reill

Mario Wanninger

Rainer Huber

Patrick Kromotis

Steffen Köhler

Frank Singer

Jörg Erich Sorg

Norbert Linder

Michael Sailer

Norwin Von Malm

Herbert Brunner

Matthias Sabathil

Simon Jerebic

Jan Marfeld

Michael Wittmann

David Racz

Alexander Wilm

Hans-Christoph Gallmeier

Johann Ramchen

Kurt-Jürgen Lang

Norbert Häfner

Thomas Schwarz

Berthold Hahn

Peter Brick

Siegfried Herrmann

Ralph Wirth

Volker Härle

Stefan Illek

Alexander F Pfeuffer

Dominik Eisert

Günter Waitl

Michael Zitzlsperger

Jürgen Moosburger

Hans-Ludwig Althaus

Moritz Engl

Markus Hofmann

Walter Wegleiter

Krister Bergenek

Matthias Peter

Julius Muschaweck

Britta Göötz

Karlheinz Arndt

Klaus Streubel

Franz Eberhard

Peter Schreiber

Gerhard Kuhn

Uli Hiller

Stefan Gruber

Thomas Zeiler

Michael Brandl

Bruno Acklin

Kirstin Petersen

Hubert Ott

Markus Zeiler

Thorsten Frank Baumheinrich

Andreas Plößl

Bryce Anton Moffat

Werner Späth

Ulrich Frei

Markus Schneider

Michael Hiegler

Klaus Müller

Stephan Miller

Sergey Kudaev

Günter Spath

Ewald Karl Michael Günther

Matthias Kiessling

Florin Oswald

Josef Hüttner

Peter Holzer

Christian Ferstl

Josef Schmid

Wolfgang Schnabel

Simon Kocur

Thomas Zahner

Florian Dams

Kurt Jürgen Lang

Stephan Pawlik

Victor Goldrin

Mathias Weiss

An assembly of electronic semiconductor components includes a carrier, at least one optoelectronic semiconductor component, a varactor component and a receiving element. The optoelectronic semiconductor component, the varactor component and the receiving element are arranged on the carrier. The optoelectronic semiconductor component and the varactor component are formed with the same semiconductor material. The optoelectronic semiconductor component has an active region configured for emitting electromagnetic radiation. The varactor component together with the receiving element forms a tunable resonant circuit. The resonant circuit is configured to draw energy for operating the optoelectronic semiconductor component from an alternating electromagnetic field.

Assembly of electronic semiconductor components and method for operating an assembly of electronic semiconductor components

A headlamp includes a first semiconductor chip and a second semiconductor chip for generating light. The first and second semiconductor chips each include several pixels. A first optics is arranged to direct light from the first semiconductor chip with a first magnification into a base region. Via a second optics, light of the second semiconductor chip is directed into a bright region with a second magnification. The second magnification is between 0.3 times and 0.7 times the first magnification inclusive, so that the bright region is smaller than the base region. The bright region is within the base region.

Headlight and operating method

A method of operating an optoelectronic component, including a plurality of picture elements and a plurality of temperature sensors, wherein the picture elements are each configured to emit light, and the temperature sensors thermally conductively connect to the picture elements, the method including acquiring temperature values supplied by the temperature sensors; and controlling the picture elements in dependence on the acquired temperature values.

Method of operating an optoelectronic component and optoelectronic component

A radiation-emitting component includes a radiation source including at least one semiconductor layer sequence that generates radiation; an optical waveguide device disposed downstream of the radiation source; and a conversion element for radiation conversion disposed downstream of the optical waveguide device, wherein radiation is emittable from the radiation source via an emission surface and couplable into the optical waveguide device, radiation is couplable from the optical waveguide device into the conversion element via an input surface, and the emission surface of the radiation source is larger than the input surface of the conversion element.

Radiation-emitting component

An optoelectronic semiconductor component is specified that has a semiconductor chip having a main side, the main side comprising a plurality of emission fields that are arranged next to one another. The emission fields are individually and independently actuatable and, during operation, they are each used to couple radiation out of the semiconductor chip. The main side has reflective partitions mounted on it that are arranged between adjacent emission fields and at least partially surround the emission fields in a plan view of the main side. In addition, the main side has a conversion element mounted on it, having an underside, which faces the semiconductor chip, and an averted top. The partitions are formed from a different material from the semiconductor material of the semiconductor chip and jut out from the semiconductor chip in a direction away from the main side. The conversion element covers at least one emission field at least partially and is connected to said emission field in a mechanically robust fashion. The underside of the conversion element in the region of the covered emission field juts out from the partitions in a direction away from the main side by no more than 10% of the height of the partitions.

Optoelectronic semiconductor component and method for fabricating an optoelectronic semiconductor component

A radiation emitting device is disclosed. In an embodiment a radiation emitting device includes a pixelated optoelectronic semiconductor chip configured to emit a first radiation having a first peak wavelength, a conversion element or color control medium configured to convert at least a portion of the first radiation into a second radiation having a second peak wavelength and a color control element including a semiconductor diode configured to absorb a portion of the first and/or second radiation, wherein devise is configured to emit radiation of a first color temperature composed mainly of the first and second radiations when a reverse voltage is applied to the semiconductor diode and to emit radiation of a second color temperature composed mainly of the first and second radiations and a third radiation with a third peak wavelength generated by the absorbed first and/or second radiation in the semiconductor diode when a forward voltage is applied to the semiconductor diode.

Radiation emitting device

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment the optoelectronic component includes a semiconductor chip subdivided into a plurality of pixels, the pixels being arranged next to one another in a lateral direction and being configured to be activated individually and independently and a metallic connecting element having an upper side and an underside, the connecting element including a contiguous metallic connecting layer, which is completely passed through by a plurality of first metallic through-connections arranged next to one another in the lateral direction, wherein the first through-connections are electrically insulated and spaced from the connecting layer by insulating regions, wherein each first through-connection is unambiguously assigned to one pixel, is electrically-conductively connected to this pixel and forms a first electrical contact to this pixel, and wherein the semiconductor chip is connected by the connecting element to a carrier.

Optoelectronic component and method for producing an optoelectronic component

A method produces a plurality of optoelectronic modules, and includes: A) providing a metallic carrier assembly with a plurality of carrier units; B) applying a logic chip, each having at least one integrated circuit, to the carrier units; C) applying emitter regions that generate radiation, which can be individually electrically controlled; D) covering the emitter regions and the logic chips with a protective material; E) overmolding the emitter regions and the logic chips so that a cast body is formed, which joins the carrier units, the logic chips and the emitter regions to one another; F) removing the protective material and applying electrical conductor paths to the upper sides of the logic chips and to a cast body upper side; and G) dividing the carrier assembly into the modules.

Method of producing optoelectronic modules and an assembly having a module

An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Optoelectronic semiconductor component

An optoelectronic semiconductor component and an adaptive headlight are disclosed. In an embodiment an optoelectronic semiconductor component includes a carrier having a carrier top side and a carrier underside, a plurality of active zones, which are fitted at the carrier top side and which are designed for emitting radiation, electrical contact locations at the carrier underside, which are designed for electrically connecting the semiconductor component and a drive unit for electrically addressing the semiconductor component and for electrically driving the active zones, wherein the active zones are fitted in a regular grid at the carrier top side, wherein the grid has a grid pitch, wherein geometrical midpoints of radiation main sides of the active zones lie on grid points of the grid, and wherein a distance between the geometrical midpoints of marginal active zones and a closest edge of the carrier is at most 50% of the grid pitch.

Optoelectronic semiconductor component and adaptive headlight for a motor vehicle

A headlight device is disclosed. In an embodiment a headlight device includes a laser light source configured to emit collimated primary radiation, a conversion element comprising conversion regions configured to at least partly convert the collimated primary radiation into secondary radiation and to form luminous regions during operation, and separating webs which separate the conversion regions from one another, wherein the separating webs are nontransmissive to the collimated primary radiation and secondary radiation and a deflection unit configured to direct the collimated primary radiation onto the conversion element and to guide the collimated primary radiation as a scanning beam over partial regions of the conversion element.

Headlight device

An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.

An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

A method of producing a conversion element includes providing a conversion body that converts electromagnetic radiation with regard to the wavelength thereof; applying an inorganic material to at least one portion of the conversion body; and forming a reflective layer that reflects the electromagnetic radiation and/or converted electromagnetic radiation with the inorganic material such that the inorganic material of the reflective layer enters into an adhesive connection with the conversion body.

Method of producing a conversion element, and conversion element

An optoelectronic semiconductor module includes a plurality of light-emitting areas, which emit light when in operation. At least two abutting lateral edges of at least one light-emitting area are arranged at an angle of more than 0 degrees and less than 90 degrees to each other. Further embodiments relate to a display having a plurality of such modules.

Optoelectronic semiconductor module and display having a plurality of such modules

Growing community of inventors

Bad Abbach, Germany

Stefan Grötsch