Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Siemens Aktiengesellschaft

Osram Gmbh

Osram Opto Semiconductor Gmbh

Stefan Groetsch

Thomas Schwarz

Peter Brick

Andreas Dobner

Michael Wittmann

Frank Singer

Sebastian Wittmann

Matthias Goldbach

Michael Zitzlsperger

Uli Hiller

Michael Brandl

Ludwig Hofbauer

Georg Bogner

Markus Heinrich Klein

Werner Spaeth

Rainer Huber

Andreas Waldschik

Matthias Bruckschloegl

Berthold Hahn

Hubert Halbritter

Stefan Illek

Simon Schwalenberg

Thomas Zeiler

Bruno Acklin

Ulrich Frei

Robert Regensburger

Ralph Wirth

Siegfried Herrmann

Stephan Lutgen

Reiner Windisch

Martin Rudolf Behringer

Andreas Ploessl

Hartmut Schneider

Moritz Engl

Klaus Streubel

Ewald Karl Michael Guenther

Joerg Sorg

Stefan Gruber

Alexander Wilm

Kirstin Petersen

Volker Haerle

Harald Jaeger

Markus Wicke

Michael Hiegler

Sebastian Stigler

Helmut Rost

Paola Altieri-Weimar

Guenter Kirchberger

Juergen Holz

Matthias Kiessling

Ingo Neudecker

Holger Klassen

Peter Holzer

Thomas Haug

Hagen Luckner

Christoph Koller

Alexander Sauerer

Simon Bluemel

Norbert Haefner

Kurt-Juergen Lang

Steffen Koehler

Thomas Zahner

Florian Dams

Julia Rothneichner

Ralf Moser

An optoelectronic device comprises a layer stack, which includes a carrier layer, a cover layer, and a first layer. The first layer is in particular an intermediate layer, arranged between the cover layer and the carrier layer. At least one electronic or optoelectronic element, in particular an optoelectronic light source, is arranged on the first layer and at least one layer of the layer stack and preferably all layers of the layer stack are at least partially transparent. The layer stack comprises at least one layer which comprises particles with a high thermal conductivity and/or at least one thermally conductive layer which is arranged between two adjacent layers of the layer stack.

Optoelectronic device

An optoelectronic device, in particular a display device, comprises: at least one optoelectronic light source, an at least partially transparent front layer, an at least partially transparent support layer, wherein the light source is arranged between the front layer and the support layer, wherein a front side of the light source faces the front layer and a rear side of the light source faces the support layer, and wherein a limiting device is provided in a circumferential direction around the light source, wherein the limiting device limits a spatial region, in which the light source emits light such that total internal reflection of the emitted light, in particular at an interface between the front layer and the outside, is avoided or at least reduced.

An optoelectronic device, in particular an at least semi-transparent pane for example for a vehicle, comprises: a cover layer, a carrier layer, an intermediate layer between the cover layer and the carrier layer, wherein at least one and preferably a plurality of optoelectronic light sources, in particular μLEDS, is arranged on at least one surface of the intermediate layer and/or is at least partially embedded in the intermediate layer, wherein the intermediate layer is adapted such that light emitted by the optoelectronic light sources at least partially spreads in and along the intermediate layer and exits the intermediate layer within and/or at a pre-set distance to the respective optoelectronic light source in a direction through the cover layer and/or through the carrier layer.

An optoelectronic device comprises a plurality of layer segments, in particular intermediate layer segments, arranged between a cover layer and a carrier layer. At least one optoelectronic component is arranged on at least one of the plurality of layer segments and a first and a second layer segment of the plurality of the layer segments are overlapping each other along a first direction each forming a respective boundary region. The first layer segment comprises at least one first contact pad and the second layer segment comprises at least one second contact pad, wherein the at least one first and second contact pad are arranged in the respective boundary region facing each other and being mechanically and electrically connected. The at least one first and second contact pad each comprises a plurality of nanowires which are at least partially made of conductive material such as for example copper, gold, or nickel.

Window or surface of a vehicle comprising at least one optoelectronic component

An optoelectronic light emitting device includes a pixel with a transparent or translucent carrier substrate, on which a semiconductor light emitting arrangement with at least one micro LED is arranged. The micro LED extends over a partial area of the pixel. The main radiation direction of the semiconductor light emitting arrangement is directed onto a backscattering surface element arranged behind the transparent carrier substrate in viewing direction. The semiconductor light emitting arrangement includes a beam shaping element.

Optoelectronic light emitting device and manufacturing method

An optoelectronic device comprises a plurality of optoelectronic light sources being arranged on a first layer, in particular an intermediate layer being arranged between a cover layer and a carrier layer. The first layer comprises or consists of an at least partially transparent material and each optoelectronic light source of the plurality of optoelectronic light sources comprises an individual light converter for converting light emitted by the associated light source into converted light. The light converter of each optoelectronic light source is arranged on the first layer and/or the associated optoelectronic light source.

Provided is a measuring system (), which comprises a sender unit () with at least one individually operable LED lighting unit () with a luminous area which has a characteristic longitudinal extent () of less than or equal to 100 &#x3bc;m and/or a surface area of less than or equal to 10&#x3bc;m, wherein the LED lighting unit () is configured to emit at least one light pulse as a sender signal () during operation, and comprises the one receiver unit () with at least one detector unit () for receiving a return signal (), which comprises at least a part of the sender signal () reflected by an external object. Furthermore, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, a method for operating a measuring system and a lighting source having a measuring system are provided.

Measuring system, use of at least one individually operable LED lighting unit as a sender unit in a measuring system, method for operating a measuring system and lighting source having a measuring system

A lighting device includes a pixel array of light-emitting pixels arranged next to one another. The pixel array includes light-emitting pixels with different pixel shapes.

Lighting device

A carrier and a component are disclosed. In an embodiment a component includes a semiconductor chip including a substrate and a semiconductor body arranged thereon and a metallic carrier having a coefficient of thermal expansion which is at least 1.5 times greater than a coefficient of thermal expansion of the substrate or of the semiconductor chip, wherein the semiconductor chip is attached to a mounting surface of the metallic carrier by a connection layer such that the connection layer is located between the semiconductor chip and a buffer layer and adjoins a rear side of the semiconductor chip, wherein the buffer layer has a yield stress which is at least 10 MPa and at most 300 MPa, and wherein the substrate of the semiconductor chip and the metallic carrier of the component have a higher yield stress than the buffer layer.

Carrier and component with a buffer layer, and method for producing a component

An optoelectronic component may include an optoelectronic semiconductor chip having an upper side and a lower side. An emitting region may be formed on the upper side. The emitting region may be configured to emit electromagnetic radiation. A subsurface, forming the emitting region, of the upper side may be smaller than a total surface of the upper side. A collimating optical element may be arranged over the emitting region.

Optoelectronic component

A pixel light source includes having a light source array, an optical system and an imager matrix arrangement, wherein the optical system maps light radiated by the light source array onto the imager matrix arrangement, the light source array includes a plurality of light emitting diode elements and a plurality of LARP elements, and the optical system is configured to map the light radiated by at least one of the LARP elements into a gap in the angular aperture situated between the light radiated by the light emitting diode elements.

Pixel light source

A light source includes a plurality of semiconductor components, wherein a semiconductor component includes a plurality of light-emitting diodes, the diodes are arranged in a predefined grid in at least one column in or on the semiconductor component, and a control circuit that drives the individual diodes is arranged on the semiconductor component.

Light source comprising a number of semi-conductor components

Electronic component with a support comprising a first inorganic insulating layer and a second inorganic insulating layer, between which a metal core is arranged, a first, a second and a third electrically conductive structure which are arranged on a top surface of the carrier, a first and a second electrical contact point and a thermal contact point, which are arranged on a bottom surface of the carrier, a component and an electrical protection element which are arranged on the side of the top surface of the carrier, in which the first electrically conductive structure is electrically conductively connected to the first electrical contact point, the second electrically conductive structure is electrically conductively connected to the second electrical contact point, the third electrically conductive structure is electrically conductively connected to the thermal contact point, the component is electrically conductively connected to the first and second electrically conductive structures, the electrical protection element is electrically conductively connected to the third electrically conductive structure and the first or second electrically conductive structure.

Electronic component and method for producing an electronic component

A method of processing an optoelectronic component includes a light source having at least one luminous area formed by one or a plurality of light emitting diodes and a receptacle device that receives the light source, including determining a deviation of an actual position of the light source at the receptacle device from a desired position of the light source at the receptacle device, and forming at least one marking at the receptacle device that indicates the deviation.

Method and apparatus that processes an optoelectronic component

An optoelectronic semiconductor component includes a first functional region having an active zone provided for generating radiation or for receiving radiation, and a second functional region, which is suitable for contributing to the driving of the first functional region. The first functional region and the second functional region are integrated on the same carrier substrate.

Optoelectronic semiconductor component

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Lengfeld-Bad Abbach, Germany

Stefan Groetsch