Ict Integrated Circuit Testing Gesellschaft Fur Halbleiterpruftechnik Mbh

Stefan Grimm

Dieter Winkler

Udo Weigel

Juergen Frosien

A focused ion beam device is described comprising a gas field ion source with an analyzer for analyzing and classifying the structure of a specimen, a controller for controlling and/or modifying the structure of the specimen according to the analysis of the analyzer, an emitter tip, the emitter tip has a base tip comprising a first material and a supertip comprising a material different from the first material, wherein the supertip is a single atom tip and the base tip is a single crystal base tip. Furthermore, the focused ion beam device has a probe current control and a sample charge control. A method of operating a focused ion beam device is provided comprising applying a voltage between a single emission center of the supertip and an electrode, supplying gas to the emitter tip, analyzing and classifying the structure of a specimen, and controlling the structure of the specimen.

Ultra high precision measurement tool

A charged particle beam device is described. The device includes an emitter unit including an emitter tip; a voltage supply unit adapted for providing a stable voltage to generate a stable extraction field at the emitter tip; a pulsed voltage supply member adapted for providing a pulsed voltage to generate a pulsed extraction field on top of the stable extraction field; a measuring unit for measuring an emitter characteristic; and a control unit adapted for receiving a signal from the measuring unit and for control of the pulsed voltage supply member.

Charged particle source with automated tip formation

A method of operating a focused ion beam device for emitting during operation a focused ion beam including ions of a gas generated at a first partial pressure, comprising cleaning an emitter tip positioned in an emitter tip region of the focused ion beam device, the cleaning comprises introducing the gas into the emitter tip region such that the gas has a second partial pressure of at least two times the first pressure. Further, a focused ion beam device is provided, comprising a gas field emitter tip () in an emitter tip region emitting an ion beam including ions of a gas, a gas inlet for supplying a gas with different pressures (), a gas outlet (), a pressure measurement device for measuring the pressure in the emitter tip region and a control unit () for controlling switching between an operation mode and a cleaning mode, further controlling the pressures in the emitter tip region and being connected to the pressure measurement device.

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Kirchheim, Germany

Stefan Grimm