Helmholtz-Zentrum Berlin Fuer Materialien Und Energie Gmbh

Helmhotz-Zentrum Berlin Fuer Materialien Und Energie Gmbh

Forschungszentrum Julich Gmbh

Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh

Stefan Gall

Sven Ring

Bernd Rech

Rolf Stangl

Holger Rhein

Christof Schultz

Frank Fink

Moshe Weizman

Rutger Schlatmann

Jürgen Hüpkes

Michael Berginski

Martin Muske

Juliane Berghold

Kyo Youl Lee

A method for producing a rear-side contact system for a silicon thin-film solar cell having a pn junction formed from a silicon absorber layer and an emitter layer includes applying an organic insulation layer to the emitter layer; producing contact holes in the insulation layer as far as the absorber layer and the emitter layer; subsequently insulating the contact holes; subsequently applying a low-melting metal layer to form n and p contacts in the contact holes; separating the metal layer into n-contacting and p-contacting regions by laser-cutting; before applying the organic insulation layer to the emitter layer, applying a TCO layer; producing holes for contacts for the silicon absorber layer in the organic insulation; and subsequently selectively doping the produced holes for the contacts as far as the silicon absorber layer.

Method for producing a rear-side contact system for a silicon thin-layer solar cell

In an embodiment of the present invention, a single-sided contact solar cell includes an absorber layer with plated-through holes; an emitter layer disposed on a first side of the absorber layer, the emitter layer including one or more semiconductor materials having different dopants; a field passivation layer disposed on a second side of the absorber layer; a contact grid covered on a top surface thereof with an insulation layer and electrically connected to a first end of the plated-through holes; and a contact layer. The contact grid and contact layer are disposed together on one side of the absorber layer and insulated with respect to each other and electrically contacted from outside of the solar cell. The contact grid is disposed between the absorber layer and the emitter layer or the field passivation layer, and the contact layer is disposed on the emitter layer or on the field passivation layer so that both the contact grid and contact layer are disposed on a top surface of the solar cell. The emitter layer or the field passivation layer is electrically connected to a second end of the plated-through holes. Where the second end of the plated-through holes is electrically connected to the emitter layer, the absorber layer and the contact grid are electrically insulated from each other.

Single-sided contact solar cell with plated- through holes and method for its production

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Berlin, Germany

Stefan Gall