Lsi Corporation

Lsi Logic Corporation

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Stefan G Block

Herbert Johannes Preuthen

Stephan Habel

David R Reuveni

Ulrich G Hensel

Juergen Dirks

Claus Pribbernow

Farid Labib

Richard Thomas Schultz

Viswanathan Lakshmanan

Jürgen Faul

Christian Haufe

Michael Zier

Ingolf Lorenz

Thomas R O'Brien

Norbert Mueller

Fulvio Pugliese

David M Ratchkov

Haritez Narisetty

David R Rueveni

Benjamin Mbouombouo

Bernd Ahner

Jürgen Dirks

Aspects of the disclosure provide a semiconductor device and method of manufacturing. Embodiments of the disclosure enable placing of protective structures without modifying spacing rules. The device includes a first device region defined above a substrate, the first device region being isolated from the substrate by a buried insulating layer. The first device region includes a first power rail, a first signal line traversing at least a first portion of the first device region, and a first plurality of edge cells positioned in the substrate adjacent the first device region. A first edge cell includes a substrate contact connecting the first power rail to the substrate and a first signal line antenna diode connecting the first signal line to the substrate.

Edge cell signal line antenna diodes

The disclosure provides transistor cells for integrated circuits and methods to form the same. A transistor cell according to the disclosure may include a substrate region including width between a first end and a second end, and a length between a third end and a fourth end in a direction orthogonal to the width. A first doped well (FDW) within the substrate region may be oppositely doped and may extend from the first end to a first interior boundary between the first and second ends of the substrate region, and from the third end to a second interior boundary between the third and fourth ends. A second doped well (SDW) within the substrate region may extend from the second end to a third interior boundary between the first and second ends, and the fourth end to a fourth interior boundary between the third and fourth ends.

Transistor cell for integrated circuits and method to form same

Structures for a circuit including field-effect transistors and methods for fabricating and operating such circuits. A plurality of logic cells with a first well and a second well. The first well is directly connected with ground. A tap cell includes an inverter having an output connected with the second well. The inverter is configured to provide a bias voltage having a first state in which a positive voltage is supplied to the second well and a second state in which the second well is connected with ground.

Simplified bias scheme for digital designs

The present disclosure provides a placing and routing method for implementing back bias in fully depleted silicon-on-insulator. In accordance with some illustrative embodiments herein, the placing and routing method comprises placing a first plurality of a standard tap well cell along a first direction, the standard tap well cell being formed by: routing a p-BIAS wire VPW and an n-BIAS wire VNW in a first a first metallization layer, and routing a power rail and a ground rail in a second metallization layer, the VPW and the VNW extending across each of the power and ground rail, wherein the VPWs of the first plurality of standard tap well cells are continuously connected and the VNWs of the first plurality of standard tap well cells are continuously connected.

Placing and routing method for implementing back bias in FDSOI

It is provided a semiconductor device comprising a power line, a Silicon-on-Insulator, SOI, substrate comprising a semiconductor layer and a semiconductor bulk substrate comprising a first doped region, a first transistor device formed in and above the SOI substrate and comprising a first gate dielectric formed over the semiconductor layer and a first gate electrode formed over the gate dielectric, a first diode electrically connected to the first gate electrode and a second diode electrically connected to the first diode and the power line; and wherein the first and second diodes are partially formed in the first doped region.

Reducing antenna effects in SOI devices

Disclosed herein is a multi-clock interface, an integrated circuit and a module thereof having the multi-clock interface and a library having cells corresponding to the above noted circuitry. In one embodiment the multi-clock interface includes: (1) a multi-clock reset synchronizer configured to receive a first external clock signal and a second external clock signal that is a multiple of the first clock signal, the reset synchronizer configured to synchronize a reset of both the first and second external clock signals and based thereon generate a reset release signal and (2) a multi-phase clock generator configured to receive the reset release signal and the second clock signal, the multi-phase clock generator configured to generate multiple clock phases from the second clock signal based on the reset release signal.

Clock tree insertion delay independent interface

A method of generating a floorplan layout of an integrated circuit (IC) that is amenable to implementation in a computer-aided design tool. The method is capable of performing placement and routing processing for the IC while requiring very little information about the specific circuitry used in various functional blocks of the IC. For example, at the time of the placement and routing processing, one or more functional blocks of the IC can be specified as empty functional blocks and/or functional blocks that are only partially rendered in gates.

Generating integrated circuit floorplan layouts

An improvement to an integrated circuit of a type having a test enable line for enabling an electrical test of the integrated circuit only when the test enable line is at a logical high value, and output lines that are only used during the electrical test of the integrated circuit, where the improvement is a switch circuit for disabling a state change in the output lines when the test enable line is at a logical low value. In this manner, the output lines do not switch during functional use of the integrated circuit, and cannot be aggressors on the data signals that are carried by the data lines that are used during the functional use of the integrated circuit. In addition, these non-switching output lines can act as guard traces that run between the data lines, further electrically isolating the data lines from one another. Further, because they do not switch during functional use of the integrated circuit, the overall power consumption of the integrated circuit is reduced.

Test pin gating for dynamic optimization

A method and apparatus are provided for storing a value in a process register of an electrical circuit, which indicates a strength of a process in which the circuit was fabricated, and adjusting an input delay applied to data signals received by a synchronous storage element of the electrical circuit based on the stored value.

Adjustable hold flip flop and method for adjusting hold requirements

A decoupling circuit disposed between a first rail and a second rail, where a third power rail is disposed between the first and second rails. A resistor having a first electrode and a second electrode is disposed between the first and second rails. Two capacitors are disposed between the first and second rails. The resistor is connected to the third rail and the two capacitors. In this manner, the two capacitors are connected in series with respect to the resistor, and in parallel with respect to one another. A first of the two capacitors is connected to the first rail, and a second of the two capacitors is connected to the second rail. At least one of the resistor and the two capacitors is disposed at least in part beneath the third rail.

N cell height decoupling circuit

A scannable flip-flop and method are provided. The flip-flop includes a clock input, a normal data input, a test data input, a normal data output and a scan data output. The flip-flop has a normal operating mode during which the normal data output is enabled and the scan data output disabled and has a scan-shift mode during which the normal data output is disabled and the scan data output is enabled.

Power saving flip-flop

A circuit which includes an IP cell having a function select input signal line, combinatorial logic having an output connected to the function select input signal line of the IP cell, a configuration register having an output connected to an input of the combinatorial logic, wherein a high/low input signal line is also connected to the combinatorial logic, wherein the circuit provided that the configuration register receives configuration data during a start-up sequence, and configuration data is held by the combinatorial logic as the configuration register powers down during a functional mode.

Config logic power saving method

An apparatus and method are provided for powering an integrated circuit chip with a supply voltage generated externally to the chip. An on-chip clock signal is generated with a ring oscillator fabricated on the integrated circuit chip. The supply voltage is altered as a function of a difference between a frequency of the on-chip clock signal and a reference clock frequency.

Method and apparatus for adjusting on-chip delay with power supply control

A digital multi-phase clock generator includes a reference clock input and first and second digitally-programmable delay lines. The first and second delay lines are coupled in parallel with one another, in series with the reference clock input. Each delay line includes a delay control input. The first delay line has a plurality of phase outputs which are synchronized with the reference clock input and have different phases from one another. The generator further includes a phase detector and a delay control circuit, which are coupled with second delay line to form a phase-locked loop. The delay control circuit has a digital delay control output, which is coupled to the delay control inputs of both the first and second delay lines. The phase-locked loop adjusts delay through the first and second delay lines to lock a phase of an output of the second delay line to a phase of the reference clock input.

Growing community of inventors

Munich, Germany

Stefan G Block