Robert Boschgmbh

Stefan Finkbeiner

Hubert Benzel

Christoph Schelling

Simon Armbruster

Frank Schaefer

Gerhard Lammel

Tjalf Pirk

Matthias Illing

Joerg Brasas

Frank Fischer

Stefan Pinter

Frieder Haag

Heiko Stahl

Julian Gonska

Christoph Friese

Matthias Fuertsch

Hans-Peter Baer

A method for manufacturing a micromechanical component is described, including the steps of: forming a first etch stop layer on a base substrate, the first etch stop layer being formed in such a way that it has a first pattern of through-cutouts; forming a first electrode-material layer on the first etch stop layer; forming a second etch stop layer on the first electrode-material layer, the second etch stop layer being formed in such a way that it has a second pattern of through-cutouts differing from the first pattern; forming a second electrode-material layer on the second etch stop layer; forming a patterned mask on the second electrode-material layer; and carrying out a first etching step in a first direction and a second etching step in a second direction counter to the first direction in order to etch at least one first electrode unit out of the first electrode-material layer and to etch at least one second electrode unit out of the second electrode-material layer. Also described are micromechanical components.

Method for manufacturing a micromechanical component, and micromechanical component

A chip module having a substrate and at least one chip connected to the substrate is provided, the substrate featuring a first main plane of extension and the chip featuring a second main plane of extension, and an acute angle being provided between the first main plane of extension and the second main plane of extension, and the substrate also comprising a mold housing.

Chip module and method for producing a chip module having plains of extensions for chip and substrate

A method for producing a micromechanical component, preferably for fluidic applications having cavities. The component is constructed from two functional layers, the two functional layers being patterned differently using micromechanical methods. A first etch stop layer having a first pattern is applied to a base plate. A first functional layer is applied to the first etch stop layer and to the first contact surfaces of the base plate. A second etch stop layer, having a second pattern, is applied to first functional layer. A second functional layer is applied to the second etch stop layer and to the second contact surfaces of the first functional layer. An etching mask is applied to the second functional layer. The second and the first functional layer are patterned as sacrificial layers by the use of the first and the second etch stop layer by etching methods and/or by using the first and the second etch stop layer. By supplementing patterning of the base plate, additional movable fluidic elements may be implemented, using the method. The method is preferably used for producing a micropump having an epitactic polysilicon layer as the pump diaphragm.

Micropump having a pump diaphragm and a polysilicon layer

A method for manufacturing a micromechanical component and a micromechanical component manufactured using this method are described, the micromechanical component having a first substrate, which in turn has at least one cavity and one printed conductor. At least a part of the printed conductor is applied to at least a part of the walls of the cavity. In particular, the floor of the cavity is considered part of the cavity walls.

Electrical through-plating of semiconductor chips

Described is a method for manufacturing a micromechanical sensor element and a micromechanical sensor element manufactured in particular using such a method which has a hollow space or a cavity and a membrane for detecting a physical variable. Different method steps are performed for manufacturing the sensor element, among other things, a structured etch mask having a plurality of holes or apertures being applied on a semiconductor substrate. Moreover, an etch process is used to create depressions in the semiconductor substrate beneath the holes in the structured etch mask. Anodization of the semiconductor material is subsequently carried out, the anodization taking place preferably starting from the created depressions in the semiconductor substrate. Due to this process, porous areas are created beneath the depressions, a lattice-like structure made of untreated, i.e., non-anodized, substrate material remaining between the porous areas and the depressions. This lattice-like structure extends preferably from the surface of the semiconductor into the depth. The etch mask for creating the depressions may be removed, optionally prior to or subsequent to the anodization. A temperature treatment is carried out for creating the hollow space and the membrane in the semiconductor substrate which forms the sensor element. During this process, the hollow space is created from the at least one area that has been rendered porous beneath a depression and the membrane above the hollow space is created from the lattice-like structure by rearranging the semiconductor material.

Method for manufacturing a micromechanical sensor element

A micromechanical sensor element and a method for the production of a micromechanical sensor element that is suitable, for example in a micromechanical component, for detecting a physical quantity. Provision is made for the sensor element to include a substrate, an access hole and a buried cavity, at least one of the access holes and the cavity being produced in the substrate by a trench etching and/or, in particular, an isotropic etching process. The trench etching process includes different trenching (trench etching) steps which may be divided into a first phase and a second phase. Thus, in the first phase, at least one first trenching step is carried out in which, in a predeterminable first time period, material is etched out of the substrate and a depression is produced. In that trenching step, a typical concavity is produced in the wall of the depression. A passivation process is then carried out in that first phase, in which the concavity produced in the walls of the depression by the first trenching step is covered with a passivation material. The first trenching step and the first passivation process may be carried out repeatedly in alternating succession within the first phase, with the result that a typical corrugation is obtained on the walls of the depression so produced. In the second phase of the trench etching process, the cavity is produced through the at least one access hole produced by the depression, by carrying out a second trenching step of a predetermined second time period that is distinctly longer in comparison with the first time period.

Sensor element with trenched cavity

A method for manufacturing a membrane in which an n-doped epitaxy layer is applied on a p-doped silicon substrate. Disposed between the silicon substrate and the epitaxy layer is a p-doping which leads to a reduction of the membrane thickness during a subsequent etching process.

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Gomaringen, Germany

Stefan Finkbeiner