X-fab Global Services Gmbh

Amplexia, LLC

X-fab Semiconductor Foundries Gmbh

Melexis Technologies Sa

Stefan Eisenbrandt

Gary M Dolny

William R Richards, Jr

Brendan Toner

Zhengchao Liu

Christoph Ellmers

Manoj Chandrika Reghunathan

Bruno Boury

Andreas Ott

Klaus Heinrich

Hartmut Liebing

Andreas Roth

Devices and methods for providing a power transistor structure with a shallow source region include implanting a dopant of a first dopant polarity into a drift region on a source side of a gate structure to form a body region, the body region being self-aligned to, and extending under, the gate structure, and producing a shallow body region wherein the source side hybrid contact mitigates punch through of the shallow self-aligned body region and suppresses triggering of a parasitic bipolar. A retrograde body well, of the first dopant polarity, may be disposed beneath, and noncontiguous with, the shallow self-aligned body region, wherein the retrograde body well improves the electric field profile of the shallow self-aligned body region. A variety of power transistor structures are produced from such devices and methods.

LDMOS with self-aligned body and hybrid source

A high-voltage sensing device providing full galvanic isolation between a high-voltage domain and a low-voltage domain, wherein the circuit topology of the device resembles that of a Wheatstone bridge, the Wheatstone bridge employing at least one voltage-controlled semiconductor resistor, wherein the circuit also comprises a reference source connected directly to the Wheatstone bridge and the device comprises a number of shielding structures to electrically isolate the high-voltage domain from the low-voltage domain.

Semiconductor circuits, devices and methods

Growing community of inventors

Erfurt, Germany

Stefan Eisenbrandt