Infineon Technologies Ag

Stefan Drexl

Martin Seck

Thomas Huttner

Thomas Böttner

Wolfgang Klein

Thomas Goebel

Markus Schwerd

Johann Helneder

Andrea Mitchell

Martina Hommel

Heinrich Körner

Heinrich Kôrner

An integrated circuit arrangement and fabrication method is provided. The integrated circuit arrangement contains an NPN transistor and a PNP transistor. The PNP transistor contains an emitter connection region and a cutout. The cutout delimits the width of the emitter connection region. The electrically conductive material of the connection region laterally overlaps the cutout.

Integrated circuit arrangement with NPN and PNP bipolar transistors and corresponding production method

A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure.

Integrated connection arrangements

An explanation is given of, inter alia, an integrated circuit arrangement () containing an npn transistor () and a pnp transistor (). Transistors with outstanding electrical properties are produced if the pnp transistor contains a cutout () for an edge terminal region () and if the edge terminal region () has a part near the substrate which is arranged in the cutout () and a part remote from the substrate which is arranged outside the cutout () and overlaps the base terminal region ().

Integrated circuit arrangement having PNP and NPN bipolar transistors, and fabrication method

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Moorenweis-Eismerszell, Germany

Stefan Drexl