Other

Imec

Katholieke Universiteit Leuven, Ku Leuven R&d

Stefan DeGendt

Paul Mertens

Marc A Meuris

Marc Marcel Heyns

Cedric Huyghebaert

Dirk Maarten Knotter

Mark Heyns

Amirhasan Nourbakhsh

Mirco Cantoro

A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.

Graphene-based semiconductor device

A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method is practiced using gas phase processing. The tank is filled with a gas mixture, comprising water vapor and ozone.

Method for removing organic contaminants from a semiconductor surface

Growing community of inventors

Wijnegem, Belgium

Stefan DeGendt