Imec Vzw

Stefan Decoster

Zheng Tao

Zsolt Tokei

Christopher Wilson

Anshul Gupta

Martin O'Toole

Martin O´TOOLE

A method for forming an interconnection structure for a semiconductor device and an interconnection structure is disclosed. The method includes forming a conductive layer on an insulating layer and etching the conductive layer to form a first conductive line. Thereafter, a spacer is formed on a side wall of a first end portion of the first conductive line. The method further includes forming a second conductive line, parallel to the first conductive line, having a second end portion, wherein a side wall of the second end portion is arranged to abut the spacer such that the first and the second metal line are extending along the same line and separated by the spacer. A recess is formed in the second metal line, extending along a portion of the second metal line, and a second mask layer is arranged in the recess.

Interconnection structure for a semiconductor device

A method for forming an interconnection structure () for a semiconductor device is disclosed, wherein a first conductive layer is etched to form a set of third conductive lines () above a first and second conductive line (). At least one of the third conductive lines comprises a contacting portion forming a first via connection () to the second conductive line. The method further comprises forming spacers () on side walls of the set of third conductive lines, and forming, between two neighboring spacers, a via hole () extending to the underlying first conductive line. A second conductive layer is deposited, filling the via hole to form a second via connection () and forming a set of fourth conductive lines () extending between the spacers.

Method of manufacturing an interconnection structure for a semiconductor device having a spacer separating first and second conductive lines

A method is provided for producing electrically conductive lines (), wherein spacers are deposited on a sacrificial structure present on a stack of layers, including a hardmask layer on top of a dielectric layer into which the lines are to be embedded, and an intermediate layer on top of the hardmask layer. A self-aligned litho-etch step is then performed to create an opening in the intermediate layer, the opening being self-aligned to the space between two adjacent sidewalls of the sacrificial structure. This self-aligned step precedes the deposition of spacers on the sacrificial structure, so that spacers are also formed on the transverse sidewalls of the opening, i.e. perpendicular to the spacers on the walls of the sacrificial structure. A blocking material is provided in the area of the bottom of the opening that is surrounded on all sides by spacers, thereby creating a block with a reduced size.

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Bertem, Belgium

Stefan Decoster