Honeywell International Inc.

Life Safety Distribution Ag

Honeywell Romania S.r.l.

Stefan Dan Costea

Viorel Georgel Dumitru

Mihai Brezeanu

Ion Georgescu

Bogdan Catalin Serban

Mihai Gologanu

Cornel P Cobianu

Mihai N Mihaila

Cazimir Gabriel Bostan

Viorel Avramescu

Li Ping Wang

Richard Alan Davis

Keith Francis Edwin Pratt

Octavian Buiu

John Chapples

Bogdan-Catalin Serban

Viorel-Georgel Dumitru

Martin Geoffrey Jones

Alisa Stratulat

An illustrative humidity sensor may include a substrate having a source and a drain, wherein the drain is laterally spaced from the source. A gate stack is provided in the space between the source and the drain to form a transistor. The gate stack may include a gate insulator situated on the substrate to form a gate insulator/substrate interface. The gate stack may further include a barrier layer above the gate insulator. The barrier layer may be configured to act as a barrier to mobile charge, humidity and/or other contaminates, and may help prevent such contaminates from reaching the gate insulator/substrate interface. The gate stack may further include a humidity sensing layer above the barrier layer. The humidity sensing layer, when exposed to humidity, may modulate the conduction channel in the substrate under the gate insulator and between the source and the drain. In some cases, the humidity level may be determined by monitoring the current flowing between the source and drain.

FET based humidity sensor with barrier layer protecting gate dielectric

Condensation sensor systems and methods are described herein. Methods for forming a condensation sensor can include depositing a III-nitride on a substrate via sputtering, and implementing conductive contacts on the deposited III-nitride via a shadow mask.

Condensation sensor systems and methods

Sensors and methods of operating sensors are described herein. One sensor includes a number of III-nitride strain sensitive devices and a number of passive electrical components that connects each of them to one of the III-nitride strain sensitive devices.

Sensors and method of operating sensor

A dynamic strain sensor includes a strain sensitive transistor and a light emitting diode coupled to the strain sensitive transistor. The dynamic strain sensor can include a piezoelectric layer incorporated into the structure of the strain sensitive transistor. The dynamic strain sensor can sense dynamic strain and can measure and monitor the dynamic strain wirelessly.

Dynamic strain sensor and method

The present disclosure relates to a touch sensor and touch sensitive display having a plurality of first and second conductive lines arranged substantially orthogonally with a sensing material to sense a change in capacitance between them. The first and second conductive lines and the sensing material defining an array of sensitive transistors.

Touch sensor and methods of making same

An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached.

High temperature strain sensor

A method of operating an electrochemical gas sensor includes: An apparatus for operating an electrochemical gas sensor, adapted for connection to an electrochemical gas sensor via a sensing circuit for control thereof, can carry out the disclosed method(s).

Methods of operation of electrochemical gas sensors

A solar cell including a quantum dot and an electron conductor, with a bifunctional ligand disposed between the quantum dot and the electron conductor. The bifunctional ligand molecule may include an electron conductor anchor that bonds to the electron conductor and a first quantum dot anchor that bonds to the quantum dot. A hole conductor such as a conductive polymer may include a second quantum dot anchor. In some instances, the first quantum dot may include selenium.

Quantum dot solar cell

A solar cell including a quantum dot and an electron conductor, and a bifunctional ligand disposed between the quantum dot and the electron conductor. The bifunctional ligand molecule may include an electron conductor anchor that bonds to the electron conductor and a first quantum dot anchor that bonds to the quantum dot. A hole conductor such as a conductive polymer may include a second quantum dot anchor.

A battery protection and monitoring system includes a plurality of MAFET (Mechanically Actuated Field Effect Transistor) switches, wherein each MAFET switch among the MAFET switches is capable of switching from an open switch condition to a closed switch condition or vice versa, such that the plurality of MAFET switches are connectable to a battery. Such a system further includes one or more transistors associated with and which communicate electrically with at least one MAFET switch among the MAFET switches. A PPTC (Polymeric Positive Temperature Coefficient) device is also associated with the transistors and the MAFET switches, such that the PPTC device, the MAFET switches and the transistors operate in association with one another and the open switch condition or the closed switch condition of the plurality of MAFET switches to identify, monitor and thus prevent at least one dangerous condition associated with the battery.

MEMS based battery monitoring technical field

A patterned dielectric elastomer actuator is disclosed which includes a series of thin parallel elastomer filaments, separated by certain distances sandwiched between a pair of rigid electrodes. The elastomer filaments and air acts as a patterned dielectric layer. The elastomer filaments can compress laterally from a circular cross-section to an elliptical shape when a voltage is applied between the rigid electrodes. The elastomer filaments can touch laterally, which implies no further squeezing in order to provide a minimal secure distance between the rigid electrodes. The dielectric elastomer actuator can be fabricated utilizing a reel-to-reel fabrication process with the thin elastomer filaments fabricated ahead of time, by extrusion techniques and cured completely before storing on reels.

Growing community of inventors

Bucharest, Romania

Stefan Dan Costea