Applied Materials, Inc.

Wayne State University

Stefan Cwik

Mark Joseph Saly

Thomas Knisley

Charles H Winter

Keenan Navarre Woods

Halide ligand free rhenium complexes are described as well as methods for depositing rhenium-containing films. Some embodiments provide a rhenium complex with a general formula of OReO-M-R1R2R3, where M is a group IV element, R1 is selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, and R2 and R3 are each independently selected from H, alkyl, alkenyl, alkynyl, an aromatic ring, or alkoxy, or R2 and R3 join together to form a ring structure or an oxo group. Some embodiments provide a rhenium complex with a general formula of Re(NR')(NHR″), where R′ and R″ are independently selected from H, alkyl, alkenyl, alkynyl, or an aromatic ring.

Rhenium complexes and methods of use

Methods for depositing rhenium-containing thin films on a substrate are described. The substrate is exposed to a rhenium precursor and a reducing agent to form the rhenium-containing film (e.g., metallic rhenium, rhenium nitride, rhenium oxide, rhenium carbide). The exposures can be sequential or simultaneous. The rhenium-precursors are substantially free of halogen.

Growing community of inventors

Braintree, MA, United States of America

Stefan Cwik