Nxp B.v.

Nexperia B.v.

Stefan Berglund

Soenke Habenicht

Steffen Holland

Seong-Woo Bae

Olrik Schumacher

Tim Boettcher

Detlef Oelgeschlager

Michael Felix Konejung

Detief Oelgeschlaeger

Uwe Podschus

Joachim Stange

Martin Roever

The disclosure relates to solid state relay circuit for switching an electrical load. The solid state relay circuit may include a relay transistor; and a driver circuit comprising a constant current source. The driver circuit is configured and arranged to switchably operate the relay transistor, and the relay transistor is configured and arranged to switchably operate the electrical load.

Solid state relay

This disclosure relates to a semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device structure comprises a semiconductor substrate having an edge region laterally separated from a device region; an edge termination structure arranged on the semiconductor substrate; wherein the edge termination structure comprises: a first oxide layer arranged on the substrate to extend from the active region to the edge region; an isolation layer arranged on top of the first oxide layer; and a metal layer arranged to at least partially cover the isolation layer and wherein the metal layer is further arranged to extend from the isolation layer to contact the edge region.

Semiconductor device structure and method of manufacture

A semiconductor device and a method of making the same is provided. The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor. The bipolar transistor has a collector region located in the semiconductor substrate; a base region located within the collector region and positioned adjacent the major surface; an emitter region located within the base region and positioned adjacent the major surface; and a collector terminal located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part electrically connected to the collector region; an electrically resistive part electrically connected to the first electrically conductive part, and a second electrically conductive part for allowing an external electrical connection to be made the collector terminal. The second conductive part is electrically connected to the first conductive part via the resistive part.

Semiconductor device

The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active region of a semiconductor and a metal contact extension placed on the metal contact.

Semiconductor device with multilayer contact and method of manufacturing the same

A resistor-equipped transistor includes a package that provides an external collector connection node (), an external emitter connection node () and an external base connection node (). The package contains a substrate upon which a transistor (), first and second resistors, and first and second diodes are formed. The transistor has an internal collector (), an internal emitter () and an internal base () with the first resistor () being electrically connected between the internal base and the external base connection node and the second resistor () being electrically connected between the internal base and the internal emitter. The first and second diodes are electrically connected in series between the external base connection node and the external collector connection node with the first diode () having a first cathode-anode orientation that is opposite of a second cathode-anode orientation corresponding to the second diode ().

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Hamburg, Germany

Stefan Berglund