Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Stefan Barthel

Lorenzo Zini

Vanessa Eichinger

Simon Jerebic

Roland Enzmann

Markus Broell

Roland Heinrich Enzmann

Christian Mueller

Anna Nirschl

Xue Wang

Harald Laux

Benedikt Beer

Marc Christian Nenstiel

Harald Dimmelmeier

The invention relates to an optoelectronic semiconductor chip comprising a semiconductor layer sequence with a first semiconductor layer, a second semiconductor layer and an active layer between the first and the second semiconductor layers. The optoelectronic semiconductor chip further comprises a first contact structure with a plurality of first contact pins and a first contact layer for electrically contacting the first semiconductor layer and a second contact structure for electrically contacting the second semiconductor layer. The first semiconductor layer is disposed between the first contact layer and the active layer. The first contact pins are disposed between the first contact layer and the first semiconductor layer and are separated and spaced at a distance from one another in the lateral direction. An electrical connection with an electrical resistance between the first contact layer and the first semiconductor layer is formed by each first contact pin. The first contact pins are selected such that they have different electrical resistances as a result of electrical connections formed by two different first contact pins.

Optoelectronic semiconductor chip

An optoelectronic device may include an optoelectronic semiconductor chip that is configured to emit electromagnetic radiation. The chip may include a first semiconductor layer, a second semiconductor layer, first and second current spreading structures, and a plurality of electrical contact elements. The first current spreading layer may be arranged on a side of the second semiconductor layer facing away from the first semiconductor layer. The plurality of electrical contact elements may electrically connect the first semiconductor layer to the first current spreading layer. The second current spreading layer may be electrically connected to the second semiconductor layer. The second current spreading layer may be arranged between the first current spreading layer and the second semiconductor layer where an insulating layer insulates a first electrical contact element and a second electrical contact element from the second current spreading layer.

Optoelectronic device comprising a current spreading layer

An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

A method and device for slurrying a suspension, the device including a mixing container with an inlet opening configured to introduce the suspension into the mixing container, a distributor element having a collecting container and an outlet arm fastened to the collecting container, and a shaft with a longitudinal axis, with the shaft and the distributor element arranged inside the mixing container, and the distributor element rotatable around the shaft. The collecting container has a collecting opening that permits passage of the suspension from the inlet opening into the distributor element, the outlet arm has an outflow opening that lets the suspension leave the distributor element, and the outlet arm permitting the suspension to flow out of the distributor element, with a flow of the suspension causing a torque on the distributor element so that the torque supports a rotation around the shaft.

Device for slurrying a suspension and method for operating a device

A semiconductor chip () is described comprising a semiconductor layer sequence () based on a phosphide compound semiconductor material or arsenide compound semiconductor material wherein the semiconductor layer sequence () contains a p-type semiconductor region () and an n-type semiconductor region (). The n-type semiconductor region () comprises a superlattice structure () for improving current spreading, wherein the superlattice structure () has a periodic array of semiconductor layers (). A period of the superlattice structure () has at least one undoped first semiconductor layer () and a doped second semiconductor layer (), wherein an electronic band gap Eof the doped second semiconductor layer () is larger than an electronic band gap Eof the undoped first semiconductor layer ().

Semiconductor chip

Growing community of inventors

Wuppertal, Germany

Stefan Barthel