Osram Gmbh

Osram Opto Semiconductors Gmbh

Osram Ag

Osram Opto Semiconductor Gmbh

Stefan Bader

Berthold Hahn

Dominik Eisert

Volker Härle

Hans-Jürgen Lugauer

Alfred Lell

Stephan Kaiser

Uwe Strauss

Michael Fehrer

Ulrich Zehnder

Manfred Mundbrod-Vangerow

Helmut Bolay

Andreas Weimer

Wolfgang Schmid

Tony Albrecht

Andreas Weimar

Jürgen Off

Johannes Völkl

Volker Haerle

Wilhelm Stein

Ferdinand Scholz

Stephan Miller

Heinz Clemens Schweizer

Hans-Juergen Lugauer

Viorel Dumitru

Bertram Kuhn

Volker HÄRLE

A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process.

Method for fabricating a semiconductor component based on GaN

Described is a radiation-emitting semiconductor body () with an active layer () for generation of radiation of a first wavelength (&#x3bb;) and a reemission layer () which comprises a quantum well structure () comprising a quantum layer structure () and a barrier layer structure (). The reemission layer is intended for generation of incoherent radiation of a second wavelength (&#x3bb;) by absorption of the radiation of the first wavelength in the barrier layer structure.

Radiation-emitting semiconductor body

A thin-film light-emitting diode chip, in which the distance between a mirror layer () and a light-generating active zone () is set in such a way that a radiation emitted by the active zone () interferes with a light reflected from the mirror layer (), the internal quantum efficiency of the active zone () being influenced by this interference and the emission characteristic of the active zone () of at least one preferred direction thereby being obtained.

Light-emitting diode chip including a mirror layer and a light-generating active zone

This invention describes a radiation-emitting semiconductor component based on GaN, whose semiconductor body is made up of a stack of different GaN semiconductor layers (). The semiconductor body has a first principal surface () and a second principal surface (), with the radiation produced being emitted through the first principal surface () and with a reflector () being produced on the second principal surface (). The invention also describes a production method for a semiconductor component pursuant to the invention. An interlayer () is first applied to a substrate (), and a plurality of GaN layers () that constitute the semiconductor body of the component are then applied to this. The substrate () and the interlayer () are then detached and a reflector () is produced on a principal surface of the semiconductor body.

Radiation-emitting semiconductor element and method for producing the same

Method for fabricating a semiconductor chip which emits electromagnetic radiation, wherein to improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack based on GaN, which comprises an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between these two semiconductor layers. The surface of the p-conducting semiconductor layer which faces away from the radiation-generating region is provided with three-dimensional pyramid-like structures. A mirror layer is arranged over the whole of this textured surface. A textured reflection surface is formed between the mirror layer and the p-conducting semiconductor layer.

Method for fabricating a plurality of electromagnetic radiation emitting semiconductor chips

A radiation-emitting semiconductor component has a high p-type conductivity. The semiconductor body of the component includes a substrate, preferably an SiC-based substrate, on which a plurality of GaN-based layers have been formed. The active region of these layers is arranged between at least one n-conducting layer and a p-conducting layer. The p-conducting layer is grown in tensile-stressed form. The p-doping that is used is preferably Mg.

Radiation-emitting semiconductor component based on gallium nitride, and method for fabricating the semiconductor component

An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers () of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers () of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (), for which the essentially non-radiating well layers () and the barrier layers () arranged in front form a superlattice.

Optical semiconductor device with multiple quantum well structure

A radiation-emitting semiconductor component having a semiconductor body (), which has an active zone (), in which, for the purpose of electrical contact connection, a patterned contact layer () is applied on a surface of the semiconductor body. Interspaces () are distributed over the contact layer () and are provided for the purpose of forming free areas () on the surface which are not covered by the contact layer (). The free areas () are covered with a mirror (). The separation of the two functions of contact connection and reflection makes it possible to achieve a particularly high performance of the component.

Radiation-emitting semiconductor element

A semiconductor chip which emits electromagnetic radiation is presented. The chip includes an epitaxially produced semiconductor layer stack based on nitride semiconductor material, which includes an n-conducting semiconductor layer, a p-conducting semiconductor layer, and an electromagnetic radiation generating region, which is arranged between these two semiconductor layers. The chip further includes a base on which the semiconductor layer stack is arranged, and a mirror layer, which is arranged between the semiconductor layer stack and the base. The n-conducting semiconductor layer faces away from the base, and the n-conducting semiconductor layer or an outcoupling layer located on the n-conducting semiconductor layer has a radiation-outcoupling surface which, in turn, includes planar outcoupling sub-surfaces, which are positioned obliquely with respect to a main plane of the radiation-generating region and each form an angle of between 15&#xb0; and 70&#xb0; with this plane.

Electromagnetic radiation emitting semiconductor chip and procedure for its production

The deposition of material () on a growth area () may be highly temperature-sensitive. In order to reduce temperature inhomogeneities on the growth area () of a substrate wafer (), a thermal radiation absorption layer () is applied on a rear side () of the substrate wafer () lying opposite to the growth area (). The thermal radiation absorption layer () exhibits good radiation absorption in the spectral range of a heating source. Since the deposition of semiconductor materials, in particular AllnGaN, may lead to (depending on the deposition temperature) different emission wavelengths of the deposited material, the use of a thermal radiation absorption layer () may produce a narrower emission wavelength distribution of the deposited material ().

Method for depositing a material on a substrate wafer

An LED chip comprising an electrically conductive and radioparent substrate, in which the epitaxial layer sequence () is provided on substantially the full area of its p-side () with a reflective, bondable p-contact layer (). The substrate () is provided on its main surface () facing away from the epitaxial layer sequence () with a contact metallization () that covers only a portion of said main surface (), and the decoupling of light from the chip () takes place via a bare region of the main surface () of the substrate () and via the chip sides (). A further LED chip has epitaxial layers only. The p-type epitaxial layer () is provided on substantially the full area of the main surface () facing away from the n-conductive epitaxial layer () with a reflective, bondable p-contact layer (), and the n-conductive epitaxial layer () is provided on its main surface facing away from the p-conductive epitaxial layer () with an n-contact layer () that covers only a portion of said main surface (). The decoupling of light from the chip () takes place via the bare region of the main surface () of the n-conductive epitaxial layer () and via the chip sides ().

Light emitting-diode chip and a method for producing same

A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer () over a substrate () or over an initial layer (), which mask layer has a plurality of windows () leading to the substrate () or to the initial layer (), etching back the substrate () or the initial layer () in the windows (), in such a manner that pits () are formed in the substrate () or in the initial layer () starting from these windows. The semiconductor material () is grown onto the substrate () or onto the initial layer (), in such a manner that lateral growth is promoted and the semiconductor material initially grows primarily from the flanks () of the pits () toward the center () of the pits () where they form a coalescence region (), so that defects in the substrate () or in the initial layer () which impinge on the flanks () of the pits () bend off toward the center of the pits () in the semiconductor material, and then, starting from the windows (), the semiconductor material grows over the mask layer () and grows together over the mask layer () between adjacent windows (), where it forms a further coalescence region (). A component layer sequence () is grown onto the semiconductor material ().

Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body

Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface () is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack () based on GaN, which comprises an n-conducting semiconductor layer (), a p-conducting semiconductor layer () and an electromagnetic radiation generating region () which is arranged between these two semiconductor layers (). The surface of the p-conducting semiconductor layer () which faces away from the radiation-generating region () is provided with three-dimensional pyramid-like structures (). A mirror layer () is arranged over the whole of this textured surface. A textured reflection surface () is formed between the mirror layer () and the p-conducting semiconductor layer (). The textured reflection surface () can increase the amount of light which is decoupled at the radiation-outcoupling surface () by virtue of the fact that a beam (), after double reflection on the reflection surface (), is more likely not to be totally reflected.

Growing community of inventors

Eilsbrunn, Germany

Stefan Bader