Hewlett-Packard Development Company, L.p.

Stanley J Wang

Eric T Martin

Donald W Schulte

Terry E McMahon

Anthony M Fuller

Mohammed Saad Shaarawi

Edward Enciso

Erik D Torniainen

George H Corrigan

Vincent C Korthuis

Tim R Koch

Aspects of the present disclosure are directed to an apparatus including a circuit region and a fluidic region. In a particular example, the circuit region with logical circuits thereon, includes a thermal oxide layer on a silicon substrate, and a dielectric layer over the field oxide layer, the dielectric layer including a doped dielectric film. The microfluidic device further includes a fluidic region including fluid ports formed through a surface of the apparatus and including an un-doped dielectric film. The fluidic region includes an aperture in the dielectric layer, where the aperture is defined by a dielectric wall which forms part of the dielectric layer. A sealing film deposited over the dielectric wall may prevent the doped dielectric film from contacting fluid contained in the fluid port.

Corrosion tolerant micro-electromechanical fluid ejection device

A microfluidic device including a fluid ejection channel defined by a fluid barrier and an orifice, or nozzle, for containing and/or passing fluids, and further including micro-electromechanical systems (MEMS) and/or electronic circuitry may be fabricated on a silicon substrate and included in a fluid ejection system. Various microfabrication techniques used for fabricating semiconductor devices may be used to manufacture such microfluidic devices.

A thermal fluid ejection heating element may include a first conductive trace, and an at least partially perforated resistive thin film material electrically coupling the first conductive trace to a second conductive trace. The perforations within the perforated resistive thin film material defines a resistance of the thermal fluid ejection heating element.

Thermal fluid ejection heating element

A system for isolating a failed resistor in a liquid dispensing system including a fusible links described. The system includes drive circuitry to drive a voltage supply to a resistor. The fusible link is disposed between a field effect transistor (FET) and the resistor. The fusible link is to fuse apart upon failure of the resistor.

Thermal inkjet resistor circuit

Isolating failed resistors

A method includes a row precharge voltage applied to a node and a column voltage that is set. A row enable signal is pulsed to a switching device coupled between the node and the column voltage to cause the node voltage to be lowered to a desired level.

Method and apparatus for driver circuit to provide a desired voltage level to a device

An embodiment includes a first semiconductor element coupled between a precharge signal and a node, the first semiconductor element to allow current to flow from the precharge signal to the node when a positive voltage is present on the precharge signal, and a switching device coupled between the node and a voltage signal, the switching device to allow current flow between the node and the voltage signal when an enable signal is asserted.

Method and apparatus for driver circuit in a MEMS device

A method of manufacturing a power switching transistor for a fluid ejection device includes forming a first conductivity type region and a first diffused region within the first conductivity type region. The first diffused region has a first conductivity type and has a greater impurity concentration than the first conductivity type region. A gate is formed and is defined to have a thin oxide region and a thick oxide region. The thick oxide region and a first portion of the thin oxide region are disposed over the first conductivity type region and the thin oxide region is at a defined distance from the first diffused region.

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Albany, OR, United States of America

Stanley J Wang