Sperry Rand Corporation

Unisys Corporation

Sperry Corporation

Stanley J Lins

David S Lo

David L Fleming

Maynard C Paul

Mark L Wilson

Marlin M Hanson

Roger Edward Lund

Le Roy Kochel

An optical bypass switch receives arbitrarily polarized light from an input optical fiber which is divided into the P and S-polarized light beams by a polarization beamsplitter. These P and S-polarized light beams are focussed to a magneto-optic garnet wherein the plane of polarization is rotated in accordance with a desired switching function and directed to an output optical fiber determined by the polarization rotation state established in the magneto-optic garnet.

Magneto-optic bypass switch

A variable refractive index device, such as a Bragg cell, is temperature stabilized by sensing ray path deviations of a secondary diffracted beam. Two photodetectors with centers offset from the exit position of the central ray of the beam at normal temperature operation receive light energy as a function of the deviation of this ray path from the normal position. Light in each fiber is detected to derive electrical signals that are utilized to establish a correction signal to a voltage controlled oscillator which varies the frequency thereof and compensates for the diffraction deviations caused by temperature variations.

Temperature compensated fiber optic bypass switch

An optical bypass switch includes a variable diffraction element responsive to acoustical signals operable to couple light signals incident to first and second input ports to first and second output ports, respectively, for a first diffraction index and from the first and second input ports to the second and first output ports, respectively, for a second diffraction index. Acoustical signals are provided by an electro-acoustic transducer coupled to the variable diffraction element which establishes acoustical signals in response to acoustical signals coupled thereto.

Fiber optic bypass switch

Stabilization of the propagation of storage bits around the storage loops of a Vertical Bloch Line (VBL) memory is obtained by the vapor-deposition of a nickel-iron film over the VBL structure. The film has a composition range of 65-90% nickel and a thickness of 1,000 to 10,000 Angstroms, and is deposited in a vacuum of 10.sup.-4 to 10.sup.-6 Torr to provide parallel, periodic, magnetic stripe domains, and thus potential well domains, that have a periodicity in the range of 0.1 to 1 micron. The stripe domains are oriented perpendicular to the direction of data propagation and form potential wells along the elongated direction of the storage loops.

Propagational control for Vertical Bloch Line memories

Disclosed is a cross-tie wall memory system for the generating, propagating and detecting of binary data represented by the presence or absence of cross-tie, Bloch-line pairs along a cross-tie wall in a thin magnetic layer. The system includes a three-level structure comprised of the following superposed layers: a straight-edged current conductive stripline; a serrated-edged thin magnetic layer data track, and a wide-narrow-edged current conductive stripline terminated on one end by a cross-tie, Bloch-line pair generator. A cross-tie detector is positioned intermediate the ends of the data track and is sandwiched between the data track and the wide-narrow-edged current conductive stripline. An N-bit data word is stored in the data track between the generator and the detector, is shifted through the detector for readout of the stored data word and is then restored into its original stored position by being shifted in a reverse manner along the data track and back through the detector.

Nondestructive readout, random access cross-tie wall memory system

A laminated, integral structure that forms a bubble memory plane for the generation, storage and transfer of single wall domains, bubble domains or bubbles is disclosed. The memory plane is formed of a non-magnetic gadolinium gallium garnet (GGG) support member; formed upon the support member is a magnetizable layer that is capable of sustaining stripe domains; formed upon the stripe domain layer is a non-magnetic gadolinium gallium garnet (GGG) spacer layer; and, formed upon the spacer layer is a magnetizable layer in which single wall domains or bubbles are capable of being generated, sustained and transferred from one position to another along a planar dimension of the bubble domain layer.

Single wall domain, stripe domain memory plane

An apparatus for and a method of moving stripe domains in a direction transverse their length is disclosed. The apparatus includes a layer of magnetizable material in which stripe domains are capable of being generated, sustained and moved. Formed upon the magnetizable layer are two parallel contiguous disk files, each of which is formed of a plurality of linearly aligned similar contiguous Bicore disks. Each Bicore disk is comprised of a disk of a relatively soft magnetizable material, e.g., Permalloy, and a superposed disk of a relatively hard magnetizable material, e.g., Cobalt, sandwiching an insulative layer, e.g., silicon dioxide, SiO.sub.2, therebetween. The magnetizations of the superposed soft and hard magnetizable disks of each of the Bicore disks are in a closed, antiparallel aligned direction with the magnetization of each of the soft magnetizable disks of the first contiguous disk file directed across the separating stripe domain propagation area and aligned with but oppositely polarized with respect to the magnetization in the associated soft magnetizable disks in the other, second contiguous disk file. A stripe domain is transferred into the propagation device by coupling the two ends thereof to the two corresponding, oppositely polarized aligned first Bicore disks of the two contiguous disk files. An appropriate propagate drive field, which is directed along the direction of propagation of the stripe domain and which is aligned with the two parallel contiguous disk files, rotates only the magnetizations of the soft magnetizable disks in each of the two contiguous disk files, in a like direction, e.g., the soft magnetizable disks in the first contiguous disk file are rotated in a clockwise direction while the magnetizations of the soft magnetizable disks in the second contiguous disk file are rotated in the counterclockwise direction. The rotating magnetization of the soft magnetizable disks of the two Bicore disks, one at each of the two ends of the stripe domain, carries the stripe domain in the direction of the propagate drive field. When the propagate drive field is suddenly terminated, the magnetizations of the soft magnetizable disks snap back under the influence of the magnetization of the hard magnetizable disk while the stripe domain remains in its new, propagated position downstream between contiguous Bicore disks. Upon successive applications of the propagate drive fields, each end of the stripe domain is transferred from an upstream Bicore disk to the next adjacent downstream Bicore disk while all stripe domains in the propagation device are transferred, in parallel, along the two aligned contiguous disk files through the stripe domain propagation area.

Stripe domain propagation using contiguous bicore disk file structure

Disclosed is an apparatus for and a method of propagating bubble domains along fixed guidance channel forming stripe domains by capturing them in moveable stripe domains and then moving the capturing moveable stripe domains. The memory plane comprises a non-magnetic Gadolinium Gallium Garnet (GGG) layer which is a supporting substrate upon which are successively formed by the liquid phase epitaxy (LPE) method: a first stripe domain layer, a first non-magnetic spacer layer; a bubble domain layer; a second non-magnetic spacer layer; a second stripe domain layer; and a third non-magnetic spacer layer upon which is formed the necessary propagation circuitry. The method of propagating the bubble domains involves forming fixed guidance channel forming stripe domains in the first stripe domain layer, orienting moveable stripe domains in the second stripe domain layer in a direction orthogonal to the direction of the fixed guidance channels, establishing bubble domains in the bubble domain layer at selected ones of each fixed guidance channel, moveable stripe domain intersection and finally oscillating the moveable stripe domains in a direction parallel to the fixed guidance channels by a time-varying, i.e., temporally changing, localized bias field gradient. A moveable stripe domain in a first position under a bias field gradient producing strip line captures a bubble domain, slowly moves the bubble domain a predetermined propagation direction under the strip line and along its associated fixed guidance channel into a second position under the strip line and then subsequently quickly moves back to its first position under the strip line allowing the bubble domain to escape therefrom leaving the propagated, escaped bubble domain in the second position under the strip line to be captured by a next adjacent downstream moveable stripe domain. Successive capture, propagate, escape operations propagate all the bubble domains along each capturing moveable stripe domain, in parallel, in the downstream propagation direction through the memory plane.

Bubble domain propagation using oscillating stripe domains

An apparatus for and a method of propagating bubble domains is disclosed. The apparatus includes a memory plane that is comprised of a non-magnetic support member upon which are formed a bubble domain layer and at least one stripe domain layer. The stripe domain layer has a set of relatively-narrow, periodic, potential well generating fixed stripe domains provided therein while the bubble domain layer has a set of relatively-wide, parallel, potential well generating fixed guidance channels provided therein that are oriented orthogonal to the parallel set of stripe domains in the stripe domain layer. Bubble domains are concurrently entered, in parallel, at one end of the memory plane in selected ones of the guidance channels. A periodic amplitude modulated bias field of frequency F propagates each of the bubble domains along the associated guidance channel from adjacent to next downstream adjacent stripe domain and thus through the memory plane at the frequency F.

Orthogonal potential well matrix and amplitude modulated bias field for

A generator of single wall domains, i.e., bubbles, for a bubble memory system is disclosed. The generator includes a closed feed ring, constructed of a repetitive pattern of magnetically soft chevrons, having merging input and output channels of similar chevron design. A nucleator in the input channel, driven at one-half the frequency of the rotating in-plane field, generates a bubble every other cycle of the in-plane field frequency such that only alternate positions along the input channel, and correspondingly the feed ring, are initially filled with bubbles. The bubbles, as driven around the four 90.degree. corners of the feed ring, are delayed one complete cycle of the in-plane field frequency such that the generated bubbles from the input channel and the bubbles in the feed ring fill alternate positions along the feed ring. Thus, after the first generated bubble completes two complete cycles of the feed ring, the feed ring is filled. Once the feed ring is filled, the nucleator is no longer used, as the feed ring, via the output channel, continually feeds bubbles to the associated major loop.

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Bloomington, MN, United States of America

Stanley J Lins