Maxim Integrated Products, Inc.

Stanley Barnett

Nicole Dorene Kerness

Arvin Emadi

Zhihai Wang

Cheng-Wei Pei

Jerome Chandra Bhat

Craig A Easson

A sensor device, a sensor package, and method for fabricating a sensor device are described that include an integrated light blocker disposed on the thermopile device and a lens configured to direct light to the thermopile device. In an implementation, the thermopile device includes a substrate; a thermopile membrane disposed on the substrate, the thermopile membrane including at least one passivation layer; a thermopile disposed within the thermopile membrane, the thermopile including at least one thermocouple; and a light blocking layer disposed proximate to the thermopile membrane, the light blocking layer including an aperture disposed proximate to the thermopile.

Thermopile temperature sensor field of view narrowing using integrated light blocking layer and lens

A sensor package having a thermopile sensor and a reference thermopile sensor disposed therein. In one or more implementations, the sensor package includes a substrate, a thermopile sensor disposed over the substrate, a reference thermopile sensor disposed over the substrate, and a lid assembly disposed over the thermopile sensor and the reference thermopile sensor. The lid assembly includes a transparent structure that passes electromagnetic radiation occurring in a limited spectrum of wavelengths and an electromagnetic blocker disposed over the lid assembly. The electromagnetic blocker defines an aperture over the thermopile sensor such that at least a portion of the electromagnetic blocker is positioned over the reference thermopile sensor. The electromagnetic blocker is configured to at least substantially block the electromagnetic radiation occurring in a limited spectrum of wavelengths from reaching the reference thermopile sensor.

Thermopile temperature sensor with a reference sensor therein

Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic.

Formation of a thermopile sensor utilizing CMOS fabrication techniques

Techniques are described to furnish a light sensor that includes a patterned IR interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR interference filter configured to block infrared light is disposed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors.

Light sensor having IR cut interference filter with color filter integrated on-chip

Techniques are described to furnish a light sensor that includes a patterned IR cut interference filter integrated with a patterned color pass filter. In one or more implementations, the light sensor includes a substrate having a surface. An IR cut interference filter configured to block infrared light is formed over the surface of the substrate. The light sensor also includes one or more color pass filters placed above or below the IR cut interference filter. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. In an implementation, a buffer layer is formed over the surface and configured to encapsulate the plurality of color pass filters to facilitate formation of the IR cut interference filter. In another implementation, the buffer layer is formed over the IR cut interference filter to function as a quasi-sacrificial buffer layer to facilitate formation of the color pass filters.

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San Francisco, CA, United States of America

Stanley Barnett