Varian Semiconductor Equipment Associates, Inc.

Applied Materials, Inc.

Stanislav S Todorov

George Gammel

Andrew Michael Waite

Norman E Hussey

Kurt T Decker-Lucke

Frank Sinclair

Joseph C Olson

Morgan Evans

Shengwu Chang

Hans-Joachim Ludwig Gossmann

Wilhelm P Platow

David R Timberlake

Richard Allen Sprenkle

William Davis Lee

Benjamin Colombeau

Mark R Amato

Hiroyuki Ito

Wei Zou

Jillian Reno

Daniel Distaso

Klaus Petry

John W Sawyer

Yuri Erokhin

Jaime M Reyes

Baonian Guo

Supakit Charnvanichborikarn

Gregory R Gibilaro

Nilay A Pradhan

Wei Zhao

Dennis Rodier

Richard White

Alexander K Eidukonis

Younki Kim

John B Cracchiolo

Jeffrey Morse

Raymond Callahan

David Olson

A method of operating a beamline ion implanter may include performing, in an ion implanter, a first implant procedure to implant a dopant of a first polarity into a given semiconductor substrate, and generating an estimated implant dose of the dopant of the first polarity based upon a set of filtered information, generated by the first implant procedure. The method may also include calculating an actual implant dose of the dopant of the first polarity using a predictive model based upon the estimated implant dose, and performing, in the ion implanter, an adjusted second implant procedure to implant a dopant of a second polarity into a select semiconductor substrate, based upon the actual implant dose.

Method and apparatus for controlled ion implantation

Provided herein are approaches for forming an image sensor with increased well depth due to cryogenic ion channeling of ultra-high energy (UHE) ions. In some embodiments, a method may include providing a wafer of a semiconductor device, the semiconductor device including a photoelectric conversion region, and cooling the wafer to a temperature less than &#x2212;50&#xb0; C. The method may further include performing an ion implant to the photoelectric conversion region to form a photodiode well after cooling the wafer.

Techniques to increase CMOS image sensor well depth by cyrogenic ion channeling of ultra high energy ions

A system and method for generating a plurality of scan profiles based on a desired implant pattern and the uniformity of the spot beam is disclosed. The system scans the spot beam and records the number of ions as a function of position. This is referred to as the linear uniformity array. The desired implant pattern and the linear uniformity array are then combined to generate a composite pattern array. This array contemplates the non-uniformity of the scanned beam and allows the system to create scan profiles that compensate for this. The software may be executed on the controller disposed in the implantation system, or may be executed on a different computing device.

System and method for improved scanned spot beam

Methods for the selective processing of the outer portion of a workpiece are disclosed. The outer portion is processed by directing an ion beam toward the workpiece, where the ion beam extends beyond the outer edge of the workpiece at two locations. The workpiece is then rotated relative to the ion beam about the center so that all regions of the outer portion are exposed to the ion beam. The workpiece may be rotated an integral number of rotations. The ion beam may perform any process, such as ion implantation, etching or deposition. The outer portion may be an annular ring having an outer diameter equal to that of the workpiece and having a width of 1 to 30 millimeters. The rotation of the workpiece may be aligned with a notch on the outer edge of the workpiece.

Selective processing of a workpiece

An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

Apparatus and method for controlling implant process

Various methods for implanting dopant ions into a three dimensional feature of a semiconductor wafer are disclosed. The implant temperature may be varied to insure that the three dimensional feature, after implant, has a crystalline inner core, which is surrounded by an amorphized surface layer. The crystalline core provides a template from which the crystalline structure for the rest of the feature can be regrown. In some embodiments, the implant energy and the implant temperature may each be modified to achieve the desired crystalline inner core with the surrounding amorphized surface layer.

Ion implant for defect control

A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.

Apparatus and techniques for controlling ion implantation uniformity

A system to control an ion beam in an ion implanter includes a detector system to detect a plurality of beam current measurements of the ion beam at a first frequency and an analysis component to determine a variation of the ion beam based upon the plurality of beam current measurements, the variation corresponding to a beam current variation of the ion beam at a second frequency different from the first frequency. The system also includes an adjustment component to adjust the ion beam in response to an output of the analysis component to reduce the variation, wherein the analysis component and the adjustment component are configured to dynamically reduce the variation of the ion beam below a threshold value while the ion beam is generated in the ion implanter.

A method of forming a FinFET device. The method may include providing a substrate having a single crystalline region, heating the substrate to a substrate temperature effective for dynamically removing implant damage during ion implantation, implanting ions into the substrate while the substrate is maintained at the substrate temperature, and patterning the single crystalline region so as to form a single crystalline fin.

FinFET device fabrication using thermal implantation

A method of treating a CMOS device. The method may include providing a first stress liner on a transistor of a first dopant type in the CMOS device. The method may further include exposing the CMOS device to first ions in a first exposure, the first ions configured to reduce contact resistance in a source/drain region of a transistor of a second dopant type.

Method and system for forming low contact resistance device

A method of modifying a shape of a cavity in a substrate. The method includes forming one or more cavities on a surface of the substrate between adjacent relief structures. The method also includes directing ions toward the substrate at a non-normal angle of incidence, wherein the ions strike an upper portion of a cavity sidewall, and wherein the ions do not strike a lower portion of the cavity sidewall. The method further includes etching the one or more cavities wherein the upper portion of a cavity sidewall etches more slowly than the lower portion of the sidewall cavity.

Method to modify the shape of a cavity using angled implantation

The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.

Method and apparatus for the production of purified liquids and vapors

A system, method and program product for determining parallelism of an ion beam using a refraction method, are disclosed. One embodiment includes determining a first test position of the ion beam while not exposing the ion beam to an acceleration/deceleration electrical field, determining a second test position of the ion beam while exposing the ion beam to an acceleration/deceleration electrical field, and determining the parallelism of the ion beam based on the first test position and the second test position. The acceleration/deceleration electrical field acts to refract the ion beam between the two positions when the beam is not parallel, hence magnifying any non-parallelism. The amount of refraction, or lateral shift, can be used to determine the amount of non-parallelism of the ion beam. An ion implanter system and adjustments of the ion implanter system based on the parallelism determination are also disclosed.

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Topsfield, MA, United States of America

Stanislav S Todorov