Evatec Ag

Oc Oerlikon Balzers Ag

Unaxis Balzers Limited

Eaton Intelligent Power Limited

Oc Oerlikon Blazers Ag

Oc Oerlikon Balzers Af

Stanislav Kadlec

Juergen Weichart

Jürgen Weichart

Walter Haag

Martin Dubs

Jurgen Weichart

Eduard Kügler

Siegfried Krassnitzer

Pius Grunenfelder

Mohamed Elghazzali

Bart Scholte Van Mast

Thomas Eisenhammer

Frantisek Balon

Bernd Heinz

Thomas Halter

Sandy Omar Jimenez Gonzalez

Hartmut Rohrmann

Venkat Raman Thenkarai Narayanan

Christian Ruempler

Hanspeter Friedli

Mykhailo Gnybida

The switch contacts of a MEMS relay for a circuit interrupter are coated with a thin layer of liquid metal, and the MEMS relay is disposed in a sealed enclosure containing a gas medium. The gas medium provides an environmentally desirable alternative to sulfur hexafluoride (SF), prevents oxidation of the liquid metal coating the relay switch contacts, and has sufficient dielectric strength in order to prevent current flow after separation of the switch contacts.

Low voltage MEMS relay filled with alternative gas mixture to SF

A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio. A target formed from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Reactive sputtering with HIPIMS

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus has a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Arc suppression and pulsing in high power impulse magnetron sputtering (HIPIMS)

A method and apparatus for sputter depositing an insulation layer onto a surface of a cavity formed in a substrate and having a high aspect ratio is provided. A target formed at least in part from a material to be included in the insulation layer and the substrate are provided in a substantially enclosed chamber defined by a housing. A plasma is ignited within the substantially enclosed chamber and a magnetic field is provided adjacent to a surface of the target to at least partially contain the plasma adjacent to the surface of the target. A voltage is rapidly increased to repeatedly establish high-power electric pulses between a cathode and an anode. An average power of the electric pulses is at least 0.1 kW, and can optionally be much greater. An operational parameter of the sputter deposition is controlled to promote sputter depositing of the insulation layer in a transition mode between a metallic mode and a reactive mode.

Reactive sputtering with HIPIMs

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

RF substrate bias with high power impulse magnetron sputtering (HIPIMS)

A target for a physical vapor deposition system includes a top, a bottom, and a base. The base essentially is defined by the surface of the target to be sputtered. A first, inner ring and a second, outer ring extend from the base. Each ring has an inner side and an outer side, wherein sputtering is concentrated on the outer sides by means of a magnet arrangement adjacent to the target.

Target shaping

For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (), the coating process takes place in a manner whereby particles emanating from a target surface () impinge predominantly from directions whose projections onto the substrate surface () lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (), encompassing plates () that extend at a normal angle to the substrate surface () parallel to the nominal direction in front of the substrate surface (), but in lieu of or in addition to such positioning the location or movement of the substrate surface () relative to the target surface () can also be suitably adjusted or controlled.

Method for producing a directional layer by cathode sputtering, and device for implementing the method

An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

A method of magnetron sputtering, comprises rotating a magnet of a magnetron with an angular frequency &#x3c9;, and, during sputtering of material from a source of the magnetron onto a substrate, periodically modulating a power level applied to the source with at least a component comprising a frequency f which is a harmonic of the angular frequency &#x3c9; of rotation of the magnet other than the first harmonic.

Method of magnetron sputtering and a method for determining a power modulation compensation function for a power supply applied to a magnetron sputtering source

A method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench described herein includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.

Application of HIPIMS to through silicon via metallization in three-dimensional wafer packaging

An apparatus for generating sputtering of a target to produce a coating on a substrate with a current density on a cathode of a magnetron between 0.1 and 10 A/cmis provided. The apparatus comprises a power supply that is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. A first switch is also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. An electrical bias device is operably connected to the substrate and configured to apply a substrate bias.

A magnetron source, a magnetron treatment chamber, and a method of manufacturing substrates with a vacuum plasma treated surface, generate and exploit on asymmetrically unbalanced long-range magnetron magnetic field pattern which is swept along the substrate surface for improving the ion density at a substrate surface being vacuum plasma treated. The long-range field reaches the substrate surface with a component of the magnetic field parallel to the substrate surface of at least 0.1, and preferably between 1 and 20, Gauss. The plasma treating can be sputter-coating, or etching, for example.

Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source

Method for producing a substrate includes establishing a plasma discharge with a locally inhomogeneous density distribution and exposing the substrate to the inhomogeneously density-distributed plasma discharge. The distribution is established by establishing a specified relative movement of the inhomogeneous density distribution and of the substrate and establishing a specified time variation of an electric power signal supplying the discharge and/or of an optionally provided further electric signal which connects the substrate to bias voltage. When the electric power signal or further electric signal is an AC signal, the specified time variation of the signal addresses its modulation and the method includes setting the variation and the movement.

Method for the production of a substrate

In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma () with a density distribution is generated and moved relative to the substrate () with a given movement.

Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber

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Prague, Czechia

Stanislav Kadlec