General Electric Company

Ge Homeland Protection, Inc.

Other

Morpho Detection, Inc.

Stacey Joy Kennerly

Glenn Scott Claydon

Anis Zribi

Shivappa Ningappa Goravar

Long Que

Shankar Chandrasekaran

Ayan Banerjee

David Cecil Hays

Sandip Maity

David Mulford Shaddock

Aaron Jay Knobloch

Peter Almern Losee

Alexander Viktorovich Bolotnikov

Marco Francesco Aimi

David Richard Esler

Wei-Cheng Tian

Guiju Song

Marko Klaus Baller

Min-Yi Shih

Ajit Achuthan

Charles Gerard Woychik

Kevin George Harding

Stanton Earl Weaver, Jr

Jun Xie

Kevin Matthew Durocher

Lowell Scott Smith

Hua Xia

Christopher Fred Keimel

Robert Gideon Wodnicki

Douglas Scott Byrd

Vinayak Tilak

David Martin Mills

Robert Dwayne Gossman

David Alan Lilienfeld

Erin Jean Finehout

Victor Donald Samper

Todd Ryan Tolliver

Kuna Venkat Satya Rama Kishore

James William Kretchmer

Li Zhu

Weizhuo Li

David Robert O'Connor

Jianming Zheng

Oliver Charles Boomhower

Victor Mario Torres

Peter Joseph Codella

David William Vernooy

Kuna Kishore

Jie Jiang

Shashi Thutupalli

Sheila Tandon

Gregory Keith Dudoff

Dirk Lange

Willam Scott Sutherland

Marcin Alexy

Ayan Banerjec

Shankar (nmn) Chandrasekaran

A method for sputtering an aluminum layer on a surface of a semiconductor device is presented. The method includes three sputtering steps for depositing the aluminum layer, where each sputtering step includes at least one sputtering parameter that is different from a corresponding sputtering parameter of another sputtering step. The surface of the semiconductor device includes a dielectric layer having a plurality of openings formed through the dielectric layer.

Sputtering system and method for forming a metal layer on a semiconductor device

A method of manufacturing a semiconductor device is presented. The method includes providing a semiconductor layer comprising silicon carbide, wherein the semiconductor layer comprises a first region doped with a first dopant type. The method further includes implanting the semiconductor layer with a second dopant type using a single implantation mask and a substantially similar implantation dose to form a second region and a junction termination extension (JTE) in the semiconductor layer, wherein the implantation dose is in a range from about 2&#xd7;10cmto about 12&#xd7;10cm. Semiconductor devices are also presented.

Semiconductor devices and methods of manufacture

A semiconductor device is provided. The semiconductor device includes a semiconductor device layer having silicon carbide and having an upper surface and a lower surface. The semiconductor device also includes a heavily doped body region formed in the upper surface of the semiconductor device layer. The semiconductor device further includes a gate stack formed adjacent to and on top of the upper surface of the semiconductor device layer, wherein the gate stack is not formed adjacent to the heavily doped body region.

Semiconductor device layout and method for forming same

A smooth electrode is provided. The smooth electrode includes at least one metal layer having thickness greater than about 1 micron; wherein an average surface roughness of the smooth electrode is less than about 10 nm.

Smooth electrode and method of fabricating same

A microfluidic device with a vertical injection aperture is provided. The microfluidic device comprises a separation channel, an injection aperture disposed adjacent to and in fluid communication with the separation channel. The microfluidic device further comprises a semi-permeable filter disposed adjacent to the injection aperture, wherein the filter is configured to preconcentrate a sample in the injection aperture to form a preconcentrated sample plug during an injection operation, and wherein the sample plug flows downwardly from the injection aperture to the separation channel during an electrophoresis operation.

Microfluidic device with vertical injection aperture

A high-temperature pressure sensor is provided. The sensor includes a quartz substrate with a cavity etched on one side. A reflective coating is deposited on at least a portion of the cavity. The sensor further includes a ferrule section coupled to the quartz substrate with the cavity therebetween. The cavity exists in a vacuum, and cavity gap is formed between the reflective metal coating and a surface of the ferrule. The sensor also includes an optical fiber enclosed by the ferrule section and extending from the cavity gap to an opposing end of the ferrule section and a metal casing surrounding the ferrule section and the quartz substrate with an opening for said optical fiber extending therefrom. The pressure applied to the quartz substrate changes the dimensions of the cavity gap and a reflected signal from the reflective coating is processed as a pressure.

High temperature optical pressure sensor and method of fabrication of the same

According to one embodiment, a micro-electrical mechanical system apparatus includes (i) a comb drive actuator having at least one irregularly shaped finger and (ii) a movable Fabry-Perot filter cavity mirror coupled to the comb drive actuator. According to some embodiments, a relationship between a voltage applied to the comb drive actuator and an amount of displacement associated with the movable mirror is substantially linear.

Irregularly shaped actuator fingers for a micro-electromechanical system fabry-perot filter

A method for making a testable sensor assembly is provided. The method includes forming a first sensor array on a first substrate having a first side and a second side, wherein the first sensor array is formed on the first side of the first substrate, coupling a first semiconductor wafer having a first side and a second side to the first sensor array, wherein the first side of the first semiconductor wafer is coupled to the first sensor array, thinning one of the second side of the first substrate or the second side of the first semiconductor wafer, and testing the first sensor array to identify operational and non-operational units in the testable sensor assembly before integration of the sensor assembly with interface electronics.

Methods of making and using integrated and testable sensor array

A system and method for managing optical power for controlling thermal alteration of a sample undergoing spectroscopic analysis is provided. The system includes a moveable laser beam generator for irradiating the sample and a beam shaping device for moving and shaping the laser beam to prevent thermal overload or build up in the sample. The moveable laser beam generator includes at least one beam shaping device selected from the group consisting of at least one optical lens, at least one optical diffractor, at least one optical path difference modulator, at least one moveable mirror, at least one Micro-Electro-Mechanical Systems (MEMS) integrated circuit (IC), and/or a liquid droplet. The system also includes an at least two degree of freedom (2 DOF) moveable substrate platform and a controller for controlling the laser beam generator and the substrate platform, and for analyzing light reflected from the sample.

System and method for optical power management

According to one embodiment, a first capacitive element may be provided and associated with a surface where a fouling layer is to be detected. A second capacitive element may also be provided, and a capacitance between the first and second capacitive elements may be used to detect formation of the fouling layer. According to another embodiment, a thermal device is provided proximate to a surface where a fouling layer is to be detected. A detector (e.g., a thermometer or vibration detector) may detect a condition associated with the surface, and formation of the fouling layer may be determined based at least in part on the condition.

Early fouling detection

A method of Raman detection for a portable, integrated spectrometer instrument includes directing Raman scattered photons by a sample to an avalanche photodiode (APD), the APD configured to generate an output signal responsive to the intensity of the Raman scattered photons incident thereon. The output signal of the APD is amplified and passed through a discriminator so as to reject at least one or more of amplifier noise and dark noise. A number of discrete output pulses within a set operational range of the discriminator is counted so as to determine a number of photons detected by the APD.

Method and apparatus for improved signal to noise ratio in Raman signal detection for MEMS based spectrometers

According to one embodiment, a micro-electrical mechanical system apparatus includes first and second mirrors that define a cavity. Moreover, a photonic band-gap structure coats a surface of at least one of the first or second mirrors to improve reflectivity. Another embodiment includes a third mirror, wherein the second and third mirrors form a second cavity. The spaces between the mirrors might comprise, for example, a pair of Fabry-Perot filter cavities for a spectrometer.

Micro-electromechanical system Fabry-Perot filter mirrors

A method for assembling a Fabry-Perot interferometer includes depositing a first metal layer on an end portion of a ferrule, depositing a second metal layer on a back portion of a die, placing the first metal layer and the second metal layer in contact with each other with respective first and second orifices aligned with respect to each other, and bonding the ferrule to the die by thermo compression. The resulting interferometer includes a glass die with a cavity, a silicon diaphragm disposed over the opening of the cavity and bonded to the glass die, a ferrule bonded to the glass die by thermo compression with the first and second orifices being aligned to each other, and an optical fiber inserted through the other end of the ferrule in direct contact to a back portion of the die and aligned with the first orifice.

High-temperature pressure sensor and method of assembly

According to one embodiment, a micro-electrical mechanical system apparatus includes a bi-stable actuator and at least one movable Fabry-Perot filter cavity mirror coupled to the bi-stable actuator. The bi-stable actuator may be associated with a first latched position and a second latched position and may comprise, for example, a thermal device, an electrostatic device (e.g., a parallel plate or comb drive), or a magnetic device. According to some embodiments, a relationship between a voltage applied to an actuator of a Fabry-Perot filter and an amount of displacement associated with a movable mirror is substantially linear.

Actuator for micro-electromechanical system fabry-perot filter

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Niskayuna, NY, United States of America

Stacey Joy Kennerly