Taiwan Semiconductor Manufacturing Comp. Ltd.

Tsinghua University

Ssu-Yu Liao

Ming-Hsi Yeh

Kuo-Bin Huang

Chun-Hsiang Fan

Tsu-Hui Su

Yu-Wen Wang

Chien-Hong Cheng

Ta-Wei Lin

Fin and nanostructured channel structure formation techniques for three-dimensional transistors can tune device performance. For example, fin profile control can be achieved by modifying the shape of fins/nanostructured channel structures so as to reduce their line edge roughness. Consequently, current flow within the channel regions of fins and nanostructured channel structures can be improved, enhancing device performance.

Fin shape modification

Methods for improving profiles of channel regions in semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a method includes forming a semiconductor fin over a semiconductor substrate, the semiconductor fin including germanium, a germanium concentration of a first portion of the semiconductor fin being greater than a germanium concentration of a second portion of the semiconductor fin, a first distance between the first portion and a major surface of the semiconductor substrate being less than a second distance between the second portion and the major surface of the semiconductor substrate; and trimming the semiconductor fin, the first portion of the semiconductor fin being trimmed at a greater rate than the second portion of the semiconductor fin.

Semiconductor device and method

A phenanthroimidazole compound represented by chemical formula 1 and an organic light-emitting diode including the same are provided.  In chemical formula 1, R, R, and m are the same as described in the specification.

Phenanthroimidazole compound and organic light-emitting diode including the same

Growing community of inventors

Hsinchu, Taiwan

Ssu-Yu Liao