Au Optronics Corporation

Ssu-Hui Lu

Ming-Hsien Lee

Jia-Hong Ye

Wei-Ming Huang

Chia-Tien Peng

Chao-Chien Chiu

Wu-Hsiung Lin

Kuo-Yu Huang

Wei-Hung Kuo

Chih-Chung Su

An active device substrate includes a substrate, first to third scan lines, a first data line, a second data line, a first active device, and a first pixel electrode. The first scan line, the second scan line, and the third scan line are extending along a first direction. The first data line and the second data line are extending along a second direction. The first active device includes a first gate, a second gate, a first semiconductor pattern layer, a first source, and a first drain. The first gate is electrically connected to the first scan line. The second gate is electrically connected to the second scan line. The first scan line and the second scan line transmit different driving signals. The first source is electrically connected to the first data line. The first pixel electrode is electrically connected to the first drain of the first active device.

Active device substrate and driving method thereof

An opposite substrate including a substrate, first light-shielding patterns, second light-shielding patterns, a planarization layer and support members is provided. The support members are located in primary support regions and secondary support regions of the opposite substrate. The first light-shielding patterns respectively extend along a first direction, and a material of the first light-shielding patterns includes an organic material. The second light-shielding patterns respectively extend along a second direction, and a material of the second light-shielding patterns includes metal. The first light-shielding patterns and the second light-shielding patterns are respectively located at opposite sides of the planarization layer. Alternatively, the first light-shielding patterns and the second light-shielding patterns are located at the same side of the planarization layer, and the planarization layer has openings respectively overlapped with the support members located in the secondary support regions.

Opposite substrate

A pixel structure including a first pixel unit, a second pixel unit, a first insulating layer, and a common electrode is provided. The first and second pixel units are disposed on a substrate, and includes a first drain and a first pixel electrode, and a second drain and a second pixel electrode, respectively. The first insulating layer covers the first and second drains. The first and second pixel electrodes are disposed on the first insulating layer, and the first insulating layer has first and second contact holes uncovering the first and second drains, respectively. The common electrode is disposed on the first insulating layer, and is electrically insulated from the first and second pixel electrodes, and has a common opening. When projected onto the substrate, the first and second contact holes are disposed within a region of the common opening.

Pixel structure

An active device array substrate includes a flexible substrate, a gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The flexible substrate has a transistor region and a transparent region adjacent to each other. The gate electrode is disposed on the transistor region. The dielectric layer covers the flexible substrate and the gate electrode. A portion of the dielectric layer disposed on the gate electrode has a first thickness. Another portion of the dielectric layer disposed on the transparent region has a second thickness less than the first thickness. The channel layer is disposed above the gate electrode. The source electrode and the drain electrode are electrically connected to the channel layer. The pixel electrode is disposed on the dielectric layer which is disposed on the transparent region. The pixel electrode is electrically connected to the drain electrode.

Active device array substrate

A pixel structure includes a substrate, a patterned semiconductor layer, an insulation layer, a gate electrode, a first inter-layer dielectric (ILD) layer, a second ILD layer, a third ILD layer, a source electrode and a drain electrode. The patterned semiconductor layer is disposed on the substrate. The insulation layer is disposed on the patterned semiconductor layer. The gate electrode is disposed on the insulation layer. The first ILD layer is disposed on the gate electrode, the second ILD layer is disposed on the first ILD layer, and the third ILD layer is disposed on the second ILD layer. The source electrode and the drain electrode are disposed on the third ILD layer, wherein the source electrode and the drain electrode are electrically connected to the patterned semiconductor layer via a first contact window and a second contact window respectively.

A method for fabricating a pixel structure includes the following steps. A patterned semiconductor layer, an insulation layer, and a patterned metal layer are formed on a substrate sequentially. A first inter-layer dielectric (ILD) layer is formed to cover the patterned metal layer. A low temperature annealing process is performed after forming the first ILD layer. A hydrogen plasma treatment process is performed after the low temperature annealing process. A second ILD layer is formed to cover the first ILD layer after the hydrogen plasma treatment process. A third ILD layer is formed to cover the second ILD layer. A source electrode and a drain electrode are formed on the third ILD layer. A passivation layer is formed on the source electrode and the drain electrode. A pixel electrode is formed on the passivation layer. A pixel structure manufactured by the above-mentioned method is also provided.

Method of fabricating pixel structure and pixel structure thereof

A method for manufacturing an active device array substrate includes providing a flexible substrate having a transistor region and a transparent region; forming a gate electrode on the transistor region; sequentially forming a dielectric layer and a semiconductor layer to cover the gate electrode and the flexible substrate; removing a part of the semiconductor layer to form a channel layer above the gate electrode and removing a thickness of the dielectric layer disposed on the transparent region, such that a portion of the dielectric layer on the gate electrode has a first thickness, and another portion of the dielectric layer on the transparent region has a second thickness less than the first thickness; respectively forming a source electrode and a drain electrode on opposite sides of the channel layer; and forming a pixel electrode electrically connected to the drain electrode.

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Hsin-Chu, Taiwan

Ssu-Hui Lu