Globalfoundries Inc.

Rensselaer Polytechnic Institute

Sruthi Muralidharan

Andy C Wei

Zhenyu Hu

Qi Zhang

Richard J Carter

Bingwu Liu

Michael Ganz

Amy L Child

Johannes Marinus Van Meer

Partha S Dutta

Hongliang Shen

Daniel T Pham

The invention provides a method of forming a semiconductor structure, which include: providing an intermediate semiconductor structure having semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate stack disposed over a portion of the fin; forming a silicon nitride layer over portions of the fin that are not located under the gate stack; and after forming the silicon nitride layer, performing one or more ion implantation steps on the intermediate semiconductor structure. The invention also provides a method of forming a semiconductor structure including: providing an intermediate semiconductor structure having a semiconductor substrate, a fin having an EG oxide layer in contact with at least a portion of the fin, and a gate material disposed over the fin; forming, over the fin and gate material of the intermediate semiconductor structure, a gate stack hardmask including an oxide layer; forming a silicon nitride barrier layer on the oxide layer of the gate stack hardmask; performing one or more gate stack hardmask patterning steps; removing the EG oxide layer from portions of the fin that are not located under the gate; and subsequent to removing the EG oxide layer from portions of the fin that are not located under the gate, performing one or more ion implantation steps.

FinFET semiconductor structures and methods of fabricating same

Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are provided. Specifically, a semiconductor device is provided including a dummy gate and a set of fin field effect transistors (FinFETs) formed over a substrate; a spacer layer formed over the dummy gate and each of the set of FinFETs; and an epi material formed within a set of recesses in the substrate, the set of recesses formed prior to removal of an epi block layer over the dummy gate.

Epitaxial block layer for a fin field effect transistor device

The present invention relates to an optical transmitter for transmitting data. The optical transmitter includes a pulse generator for generating N data streams overlapping in time from a de-multiplexed data source. Each respective data stream has pulses with shapes unique to that respective data stream. The transmitter also includes an optical source optically transmitting an output pulse that is generated by summing the uniquely shaped pulses from each respective data stream that are overlapping in time. Each output pulse represents N bits of the data source, where N&#x3e;1.

Multiplexed pulse modulation using superposition

Approaches for improving overlay performance for an integrated circuit (IC) device are provided. Specifically, the IC device (e.g., a fin field effect transistor (FinFET)) is provided with an oxide layer and a pad layer formed over a substrate, wherein the oxide layer comprises an alignment and overlay mark, an oxide deposited in a set of openings formed through the pad layer and into the substrate, a mandrel layer deposited over the oxide material and the pad layer, and a set of fins patterned in the IC device without etching the alignment and overlay mark. With this approach, the alignment and overlay mark is provided with the fin cut (FC) layer and, therefore, avoids finification.

Overlay performance for a fin field effect transistor device

Growing community of inventors

Troy, NY, United States of America

Sruthi Muralidharan