Eugenus, Inc.

Srishti Chugh

Niloy Mukherjee

Somilkumar J Rathi

Bunsen B Nie

Hae Young Kim

Sung-Hoon Jung

Nariman Naghibolashrafi

Yoshikazu Okuyama

Jerry Mack

Jae Seok Heo

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.

Conformal titanium nitride-based thin films and methods of forming same

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San Jose, CA, United States of America

Srishti Chugh