Advanced Micro Devices Corporation

Sriseshan Srikanth

Vignesh Adhinarayanan

Sergey Blagodurov

Jagadish B Kotra

Vedula Venkata Srikant Bharadwaj

SeyedMohammad SeyedzadehDelcheh

William Peter Ehrett

Prachi Shukla

A semiconductor device, referred to herein as a Globally Interconnected Operations (GIO) layer, provides global operations in the form of global data reduction for one or more PE arrays. The GIO layer includes processing elements that perform global data reduction on processing results from one or more PE arrays. The GIO layer includes connectors that allow it to be arranged in a 3D stack with one or more PE arrays, for example, on top of or beneath a PE array. This allows reduction operations to be implemented across PE arrays using an efficient topology with superior flexibility, scalability, latency and/or power characteristics that is customizable for particular use cases at assembly time, without requiring costly and time-consuming redesign of PE arrays, and without being constrained by particular PE array designs.

Semiconductor device for performing data reduction for processing arrays

A method includes, in response to receiving a command from a processing device, reading original data from a set of one or more memory devices based on an address range specified in the command, and transmitting a subset of the original data to the processing device, where the subset includes fewer zero values than the original data.

Near-memory engine for reducing bandwidth utilization in sparse data applications

A page swapping memory protection system tracks accesses to physical memory pages, such as in a table with each row storing a physical memory page address and a counter value. This counter value records the number of accesses (e.g., read access or write accesses) to the corresponding physical memory page. In response to one of the counters exceeding a threshold value, the corresponding physical memory page is swapped with another page in physical memory (e.g., a page the table indicates has a smallest number of accesses). According, unreliability in the physical memory introduced due to frequent accesses to a particular physical memory page is mitigated.

Page swapping to protect memory devices

A fine-grained dynamic random-access memory (DRAM) includes a first memory bank, a second memory bank, and a dual mode I/O circuit. The first memory bank includes a memory array divided into a plurality of grains, each grain including a row buffer and input/output (I/O) circuitry. The dual-mode I/O circuit is coupled to the I/O circuitry of each grain in the first memory bank, and operates in a first mode in which commands having a first data width are routed to and fulfilled individually at each grain, and a second mode in which commands having a second data width different from the first data width are fulfilled by at least two of the grains in parallel.

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Austin, TX, United States of America

Sriseshan Srikanth