Freescale Semiconductor,inc.

Motorola Corporation

Sriram Kalpat

Leo Mathew

Melvy Freeland Miller, Iii

Peter Zurcher

Mohamed S Moosa

Thomas P Remmel

Olubunmi O Adetutu

Hector Adrian Sanchez

Michael Alan Sadd

Voon-Yew Thean

Hsing H Tseng

Melvy F Miller

A method of making a semiconductor device includes the steps of: providing a semiconductor substrate () having a patterned interconnect layer () formed thereon; depositing a first dielectric material () over the interconnect layer; depositing a first electrode material () over the first dielectric material; depositing a second dielectric material () over the first electrode material; depositing a second electrode material () over the second dielectric material; patterning the second electrode material to form a top electrode () of a first capacitor (); and patterning the first electrode material to form a top electrode () of a second capacitor (), to form an electrode () of the first capacitor, and to define a resistor ().

Semiconductor device comprising passive components

A device and method for phase detection are disclosed. The device includes a phase differential module that provides a phase difference signal based on the phase difference between a data signal and a reference signal. The phase difference signal is provided to a first gate of a multi-gate fin-type field effect transistor (multi-gate FinFET) of the device. A second gate of the multi-gate FinFET transistor receives a bias signal that provides a phase detection threshold. A phase adjustment signal is provided at one or both of the FinFET current electrodes based on the phase difference signal and the bias signal.

Phase detector device and method thereof

A device and method for temperature compensation of an electronic device are disclosed. The device includes a temperature bias controller with a temperature sensor. A bias signal based upon a signal from the temperature sensor is provided to a first gate of a multiple fin gate field effect transistor (multigate FinFET) transistor of a functional block. A second gate of the multigate FinFET transistor receives a control signal to control its operation within the functional block. In this configuration the first gate of the multigate FinFET transistor can be used for temperature compensation while the second gate is used for functional operation of the transistor. Specific embodiments of the present disclosure will be better understood with respect to the figures.

Temperature compensation device and method thereof

A method of making a semiconductor device includes the steps of: providing a semiconductor substrate () having a patterned interconnect layer () formed thereon; depositing a first dielectric material () over the interconnect layer; depositing a first electrode material () over the first dielectric material; depositing a second dielectric material () over the first electrode material; depositing a second electrode material () over the second dielectric material; patterning the second electrode material to form a top electrode () of a first capacitor (); and patterning the first electrode material to form atop electrode () of a second capacitor (), to form an electrode () of the first capacitor, and to define a resistor ().

Method of making a semiconductor device, and semiconductor device made thereby

A voltage controlled oscillator (VCO) has a plurality of series-connected inverters. Within each inverter a first transistor has a first current electrode coupled to a first power supply voltage terminal, a second current electrode, a first control electrode coupled to an output terminal of another inverter of the plurality of series-connected inverters, and a second control electrode for receiving a first bias signal. A second transistor has a first current electrode coupled to the second current electrode of the first transistor, a second current electrode coupled to a second power supply voltage terminal, and a first control electrode coupled to the first control electrode of the first transistor. The second control electrode of the first transistor of each inverter receives a same or separate analog control signal to adjust the threshold voltage of the first transistors thereof to affect frequency and phase of the VCO's signal.

Voltage controlled oscillator with a multiple gate transistor and method therefor

A gate dielectric structure () fabrication process includes forming a transitional dielectric film () overlying a silicon oxide film (). A high dielectric constant film () is then formed overlying an upper surface of the transitional dielectric film (). The composition of the transitional dielectric film () at the silicon oxide film () interface primarily comprises silicon and oxygen. The high K dielectric () and the composition of the transitional dielectric film () near the upper surface primarily comprise a metal element and oxygen. Forming the transitional dielectric film () may include forming a plurality of transitional dielectric layers () where the composition of each successive transitional dielectric layer () has a higher concentration of the metal element and a lower concentration of silicon. Forming the transitional dielectric layer () may include performing multiple cycles of an atomic layer deposition process () where a precursor concentration for each cycle differs from the precursor concentration of the preceding cycle.

Transitional dielectric layer to improve reliability and performance of high dielectric constant transistors

An analog to digital converter including a plurality of multiple independent gate field effect transistors (MIGFET) that provide a plurality of digital output signals, is provided. Each MIGFET of the plurality of MIGFETs may have first gate for receiving an analog signal, a second gate for being biased, and a current electrode for providing a digital output signal from among the plurality of the digital output signals. Each MIGFET of the plurality of MIGFETs may have a combination of body width, channel length that is unique among the plurality of MIGFETs to result in a threshold voltage that is unique among the plurality of MIGFETs. A digital to analog converter including a plurality of MIGFETs is also provided.

Growing community of inventors

Austin, TX, United States of America

Sriram Kalpat