Globalfoundries Singapore Pte. Ltd.

Sriram Balasubramanian

Eng Huat Toh

Shyue Seng Tan

Desmond Jia Jun Loy

Tze Ho Simon Chan

Hari Balan

Cheong Sik Yu

Structures for a non-volatile memory and methods of forming such structures. A gate electrode and a gate dielectric layer are formed over an active region with the gate dielectric layer between the gate electrode and the active region. A first doped region is formed in the active region, a second doped region is formed in the active region, and a source line is coupled to the second doped region. The first doped region is positioned in the active region at least in part beneath the gate dielectric layer, and the second doped region is positioned in the active region adjacent to the first doped region. The first doped region has a first conductivity type, and the second doped region has a second conductivity type opposite to the first conductivity type.

Non-volatile memory elements with one-time or multiple-time programmability

Semiconductor memory devices and methods for writing data in memory cells are provided. An exemplary method for writing data in a memory cell includes providing the memory cell with a first pull-up transistor, a first power supply line coupled to the first pull-up transistor, a second pull-up transistor, and a second power supply line coupled to the second pull-up transistor. The method further includes applying a primary voltage from the first power supply line to the first pull-up transistor. The method also includes applying a secondary voltage from the second power supply line to the second pull-up transistor, wherein the secondary voltage is higher than the primary voltage. Further, the method includes performing a write operation to save a selected value in the memory cell.

Memory cells and methods for writing data to memory cells

Growing community of inventors

Singapore, Singapore

Sriram Balasubramanian