National Institute for Materials Science

Srinivasan Ananthakrishnan

Kazuhiro Hono

Seiji Mitani

Takao Furubayashi

Yukiko Takahashi

Shinya Kasai

Masamitsu Hayashi

Rajanikanth Ammanabrolu

Jaivardhan Sinha

Shigeyuki Hirayama

Varaprasad Bollapragada

To realize a spintronics device with high performance, it is an object of the present invention to provide a CoFe-based Heusler alloy having a spin polarization larger than 0.65, and a high performance spintronics devices using the same. A CoFe(GaGe) Heusler alloy shows a spin polarization higher than 0.65 by a PCAR method in a region of 0.25&#x3c;x&#x3c;0.60 and it has a Curie temperature as high as 1288K. A CPP-GMR device that uses the CoFe(GaGe) Heusler alloy as an electrode exhibits the world's highest MR ratio, an STO device exhibits high output, and an NLSV device exhibits a high spin signal.

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Growing community of inventors

Tsukuba, Japan

Srinivasan Ananthakrishnan