International Business Machines Corporation

Srinivasa S Reddy

Govindarajan Natarajan

John Ulrich Knickerbocker

Sarah Huffsmith Knickerbocker

Renuka S Divakaruni

Jon Alfred Casey

Shaji Farooq

Lawrence D David

Anthony Mastreani

Lester W Herron

Donald Rene Wall

Rao Venkateswara Vallabhaneni

John Acocella

Vivek M Sura

Benjamin V Fasano

James N Humenik

Richard Francis Indyk

Robert W Nufer

Mark A Takacs

Steven M Kandetzke

Scott Ira Langenthal

Sundar M Kamath

Richard A Bates

Arnold I Baise

David R Clarke

Daniel P Kirby

Lovell B Wiggins

Amy T Matts

Sampath Purushothaman

Charles Hampton Perry

Subhash Laxman Shinde

Mukta S Farooq

Ajay Prabhakar Giri

Ananda H Kumar

Philip L Flaitz

Raj N Master

George Czornyj

Paul H Palmateer

Peter A Agostino

Farid Youssif Aoude

Salvatore J Scilla

Liang-Choo Hsia

Hal Mitchell Lasky

Werner E Dunkel

Allen J Dam

Ray M Bryant

Manfred Sammet

Chandrasekhar Narayan

Lewis Sigmund Goldmann

David B Goland

Dudley A Chance

Daniel P O'Connor

Rao R Tummala

Gregory Blair Martin

Richard A Shelleman

Linda L Rapp

Sylvia M DeCarr

Nancy C Stoffel

Janet L Jozwiak

Replacements of thick film pads with smaller, thinner, metal contacts or straps are used to eliminate many of the stress-related failure modes associated with the larger contact pads. These straps allow for a more simplified manufacturing process than that associated with an anchored I/O pad configuration. A single via, electrically connected to a plurality of vias in a substrate layer above, is introduced to enhance the reliability of the signal net, and provides for higher frequency applications through reduction in parasitic capacitance and electrical leakage. The straps are directionally located toward the substrate center. Once the locations of the internal strap vias are redirected to lower local distance-to-neutral points, still within the same I/O capture pad, and directed towards the center of the substrate, single vias are then placed at the strap end closest the substrate center.

Enhanced high-frequency via interconnection for improved reliability

The distance between a discrete or passive electrical component and an electrical semiconductor device and substrate or carrier is minimized by shortening the lead length connections of the passive component. One or more passive electronic components are mounted within the body of a carrier or board by creating a cavity in the substrate or carrier that is directly below a semiconductor device. The passive component is electrically connected to the substrate and device using solder bump technology resulting in much shorter lead length connections to and from the passive component.

Multi-cavity substrate structure for discrete devices

Multilayer glass ceramic substrate electronic components having enhanced flexibility and strength are prepared using greensheets as a top and/or bottom layer, which greensheets are made from a glass-ceramic greensheet casting composition comprising crystallizable glass, a binder resin and a solvent system, and preferably a plasticizer. The top and/or bottom greensheets have a lower coefficient of thermal expansion (CTE) than the greensheets used to make the internal layers of the MLC and both greensheets are characterized by having, after sintering, a microstructure which is greater than 99% crystalline. A crystalline matrix forming material such as P,O,is preferably used in the composition. This type structure, in combination with the lower CTE, has been found to provide an MLC having enhanced strength and flexibility.

Method and materials for increasing the strength of crystalline ceramic

A method for making multilayer ceramic substrates having substantially reduced planar shrinkage and distortion resulting from the firing or sintering process. Contact sheets are employed in the fabrication process on the surface of the multilayer ceramic substrate to be fired with the contact sheets being prepared from a composition containing a non-sinterable non-metallic inorganic material such as alumina having an average particle size approximately about 1 micron or less and an organic binder and preferably a plasticizer. In a preferred embodiment of the invention, the multilayer structure to be fired containing the contact sheet of the invention is provided with a beveled or chamfered edge at an angle of greater than about 60 degrees. A fabrication process employing only chamfering of the edge or the use of a contact sheet of the invention also provides improved multilayer ceramic substrate products. A further feature is a method to control the surface topography of surface metallization by adjusting the compressibility of the contact sheets during fabrication of the substrate.

Method for producing ceramic surfaces with easily removable contact

Disclosed is a multilayer ceramic substrate, and a method for forming same, which has an outer unsealed layer having a metallic via, an inner sealed layer having a composite via of metallic and ceramic materials and a further unsealed layer having a metallic via.

Ceramic substrate having a sealed layer

A copper-based paste is disclosed for filling vias in, and forming conductive surface patterns on, ceramic substrate packages for semiconductor chip devices. The paste contains copper aluminate powder in proper particle size and weight proportion to achieve grain size and shrinkage control of the via and thick film copper produced by sintering. The shrinkage of the copper material during sintering is closely matched to that of the ceramic substrate.

Copper-based paste containing copper aluminate for microstructural and

A paste for one of a via and an external feature, such as a pad, tab, or line, of a ceramic substrate, includes at least one of titania and zirconia, and a filler material mixed with the at least one of titania and zirconia. Further, the via structure or external feature such as an input/output pad, tab, or line, includes a metallic plating thereover. A method of forming the via structure or the external feature on the ceramic substrate, includes steps of either depositing the paste in the via of the ceramic substrate or depositing the paste on the ceramic substrate, and depositing, by a dry process metallic plating, a metallic plating on the paste. The paste includes at least one of titania and zirconia for reducing residual stress without effecting the platability of the metallic plating.

Platible non-metallic filler material for metallurgical screening paste

The present invention discloses a CVD (Chemical Vapor Deposition) process where nickel or alloys thereof, such as, Ni/Cu, Ni/Co, are deposited on metal surfaces which are capable of receiving nickel or alloys thereof, using an Iodide source, preferably an Iodide salt, such as, Copper Iodide.

CVD of metals capable of receiving nickel or alloys thereof using iodide

A co-sintered ceramic substrate structure is formed through punching and screening of a plurality of ceramic green sheets with a plurality of composite metal pastes and/or inks and laminating the structure. The co-sintered surface metallization comprises dual screened composite metal pastes, one on top of the other and bonded to the sintered ceramic substrate to provide bonding of the surface metallization to the sintered ceramic substrate.

Co-sintered surface metallization for pin-join, wire-bond and chip attach

A ceramic substrate having an improved I/O pad adhesion layer. The ceramic substrate has an I/O pad for joining to an I/O pin. The I/O pad includes an improved adhesion layer of TiO, followed by layers of Ti (or Ti and Ni) and a solder wettable layer which may be Au or Pt. Also disclosed are low yield stress solders of Sn/Sb, Sn/Ag, Sn/Cu and Sn/Cu/Ti.

I/O pad adhesion layer for a ceramic substrate

A copper-based paste for multilayer ceramic substrate vias and lines including copper particles as the majority constituent of the paste, a refractory metal additive selected from the group consisting of chromium, tantalum, and tungsten, and organic materials. This copper-based paste has particular applicability to the formation of vias and lines in ceramic packages wherein the vias and lines would have a composition principally of copper with additions of the refractory metal.

Copper-based paste containing refractory metal additions for

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Lagrangeville, NY, United States of America

Srinivasa S Reddy