Semiconductor Components Industries, LLC

Srinivasa Reddy Yeduru

George Chang

Soonjae Lee

Byoungyong Park

Naveen Ganagona

In some aspects, the techniques described herein relate to a semiconductor device including: a substrate having a first side and a second side, the second side being opposite the first side; active circuitry disposed on the first side of the substrate; a metallic implant disposed in the substrate, the metallic implant being a blanket implant on the second side of the substrate; and a metallic layer disposed on the second side of the substrate, the metallic layer and the second side of the substrate including the metallic implant defining an ohmic contact.

Backside ohmic contacts for semiconductor devices

In some aspects, the techniques described herein relate to an electronic device including: a substrate; a metallization layer, the metallization layer having: a first surface disposed on the substrate; a second surface opposite the first surface; and a corrosion-prevention implant layer disposed in the metallization layer, the corrosion-prevention implant layer extending from the second surface to a depth from the second surface in the metallization layer, the depth being less than a thickness of the metallization layer; and an electrical connector coupled with the second surface.

Growing community of inventors

Fishkill, NY, United States of America

Srinivasa Reddy Yeduru