Texas Instruments Corporation

Srinivasa Raghavan

Yaw S Obeng

Murlidhar Bashyam

A method for manufacturing a semiconductor device. The method comprises forming a metal layer on a silicon-containing layer located on a semiconductor substrate. The method also comprises reacting a portion of the metal layer with the silicon-containing layer to form a metal silicide layer. The method further comprises removing an unreacted portion of the metal layer on the metal silicide layer by a removal process. The removal process includes delivering a flow of an acidic solution to a surface of the unreacted portion of the metal layer, wherein the acidic solution delivered to the surface is substantially gas-free.

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Plano, TX, United States of America

Srinivasa Raghavan