Rca Inc.

Srinivas T Rao

Frank Z Hawrylo

Richard N Brown

James C Whartenby

Louis Trager

Raymond J Menna

It has been found that an additive comprising a mixture of phenazine dyestuffs in the combination from about 30 to 40 percent by weight of (a) a Janus Green B type dyestuff or a mixture thereof and (b) from about 70 to 60 percent by weight of Safranine T, when added to an aqueous acidic copper sulfate bath in the amount of about 0.03 to about 0.10 gram per liter of the bath, deposits copper consistently with the required properties for micromachining.

Bath and process for the electrodeposition of micromachinable copper and

An improved process for electroplating bonding pads, such as of gold, onto semiconductor devices is disclosed. Upon electrically connecting a masked semiconductor body and a suitable anode to the negative and positive terminals respectively of a power supply and submerging the wafer and anode into a suitable electrolyte, a modulated, rather than direct, current is applied to the electrolyte. A low stress, fine grain bonding pad layer is provided and, unexpectedly, non-planarities in the semiconductor body surface having a depth of about 1-3 microns can be substantially planarized when the thickness of the layer deposited is about 6-8 microns or more.

Bonding pads for semiconductor devices

A method is provided for fabricating a via connector from a first surface of a semiconductor wafer to an opposite second surface of the wafer. The first step consists of forming an adherent metal layer on the first surface on the semiconductor wafer. If the first surface of the semiconductor wafer has electronic components formed thereon, the metal layer is applied over the electronic components and preferably a protective layer of material is formed over the metal layer. Via holes are then laser drilled at predetermined locations through the metal layer and then through the semiconductor wafer. Thereafter a photoresist layer is applied over the first surface and exposed and developed to provide passage holes in the photoresist which are in alignment with the laser drilled apertures. The metal layer is then connected in the cathode position of the electroforming apparatus and via connectors are thereafter electroformed in the via holes.

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Kendall Park, NJ, United States of America

Srinivas T Rao