The University of Arizona

Asm America, Inc.

International Business Machines Corporation

Texas Instruments Corporation

Raytheon Company

Arizona Technology Development Corporation

He Holdings, Inc. Doing Business As Hughes Electronics

Larry W. Brown

Arthur Mcginnis

James A. Leal

Srini Raghavan

Eric James Shero

Mohith E Verghese

Gregory Boyd Shinn

Pierre A Deymier

Iqbal Ali

James B Hoying

James A Leal

Der'e Jan

Sudipto Ranendra Roy

Rajani C Shah

Shelley H Peterman

Manish Keswani

Raghunath Chilkunda

Roberto Guzman

Rajkumar Govindarajan

Arthur McGinnis

Ian Jongewaard

Larry W Brown

Pradeep P Phule

Almoi Nyls Jongewaard, Legal Representative

Subhash H Risbud

Compositions, methods, and systems permit selectively etching metal oxide from reactor metal parts (e.g., titanium and/or titanium alloys). The etching composition comprises an alkali metal hydroxide and gallic acid. The method is useful for cleaning reaction chambers used in the deposition of metal oxide films such as aluminum oxide.

Selective etching of reactor surfaces

A benign all-wet process for stripping photoresist after an implantation process performed to fabricate a device is provided. A method of stripping implanted resist includes a first step of disrupting a crust formed on the surface of the resist during the implantation process and then removing the underlying resist. In accordance with embodiments of the invention, a catalyzed hydrogen peroxide (CHP) chemical system is used to disrupt the crust and allow for low temperature (&#x3c;180&#xb0; C.) removal of the underlying resist.

Enhanced stripping of implanted resists

Microtubules are excellent candidates for the fabrication of nanostructures, including nanowires. A method for controlled nucleation and growth of microtubules on substrates (e.g., gold on a silicon wafer) is provided. The substrate is functionalized with a nucleating agent for microtubule growth. The method can be employed to generate nanoscale structures on substrates or between substrates by additional attachment of MT capture agents which function to capture the ends of growing MT to form connecting MT structures. The method can be used to form 2- and 3-D structures on or between substrates and can function to establish interconnects between nanoscale devices or molecular electronic devices and electrodes. A specific method for metallization of biological macromolecules and structures in provides which can be beneficially applied to metallized the MT formed by the growth and capture method. The metallization method is biologically benign and is particularly useful for copper metallization of MTs.

Directional self-assembly of biological electrical interconnects

A powder coating method includes applying an antistatic material to the surface of an electrically nonconducting substrate. The antistatic material is preferably a fatty amine salt and is applied by spraying. A flow of electrostatically charged powder particles is directed toward the substrate to form a powder coating on the substrate, and the powder coating is thereafter cured.

Electrostatic powder coating of electrically non-conducting substrates

A post chemical-mechanical polishing clean-up process. Particles and ionic and metallic contaminants remaining on wafer 32 surface after CMP are removed and scratches are smoothed. The wafer 32 may be subjected to a high pressure/high rotational speed rinse at spindle rinse station 42 followed by buffing of the wafer 32 on a second polishing platen 38. If desired, a second high pressure/high speed rinse at spindle rinse station 42 may be performed after the buffing step. The wafer 32 may then be then transferred to a tank 50 for a megasonic bath and after the megasonic bath, the wafer 32 is transferred to a scrubber 44, which scrubs both surfaces of the wafer 32 with brushes and then spins the wafer 32 dry as spin station 84. All transfers are performed in a solution such as DI water to prevent drying of slurry on the wafer surface.

Post-chemical mechanical planarization clean-up process using

There is provided a filter medium comprising a microporous polyvinylidene fluoride membrane and a polymer containing a positively charged organic phosphonium compound grafted to the membrane in a concentration sufficient to provide a surface of said membrane with a positive charge such that there is minimal susceptibility to the extraction of said polymer. The polymer may also contain an acrylate or methacrylate. There is also provided a method for ultrapurifying a liquid and an ultrapurifying system for water.

Modification of polyvinylidene fluoride membrane and method of filtering

The present invention relates to a method for the preparation of ultrafine oxide particles using organized reaction media. Integrated circuit (IC) densities have necessitated the use of ultrahigh purity process fluids in state of the art fabrication facilities. It is the purpose of the present invention to synthesize monodispersed submicron particles of some representative contaminants, such as ultrafine oxide particles, using organized reaction media, and study their characteristics in relation to their removal from process fluids.

Low temperature preparation of ultrafine oxide particles using organized

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Tucson, AZ, United States of America

Srini Raghavan